Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP1027200-53
Description
RFHIC’s RWP1027200-53 is a 200W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) wideband amplifier operates from 1000 to 2500 MHz and offers high reliability and ruggedness. The RWP1027200-53 is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification
Aerospace & Defense
Military
Electronic Warfare
Radar
1000-2500MHz GaN Amplifier
200W RF Power Amplifier
Wideband GaN Power Amplifier
GaN on SiC Broadband Amplifier
Electronic Warfare RF Amplifier
Specification
| Min Freq.(MHz) | 1000MHz |
|---|---|
| Max Freq.(MHz) | 2500MHz |
| Type | Pallet |
| Typ Output Power(W) | 200W |
| Power Gain(dB) | 50dB |
| Efficiency | 33% |
| Dimension(mm) | 223(L) x 131(W) x 30(H) |
| Weight | 1.3kg |
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