Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP25020-50
Description
RFHIC’s RWP25020-50 is a gallium-nitride on silicon carbide (GaN-on-SiC), S-band, wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 3000 MHz, the RWP25020-50 yields a small signal gain of 25 dB with 44 dBm at P3dB peak. The RWP25020-50 is designed using RFHIC’s GaN-on-SiC on silicon carbide high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq.(MHz) | 2000MHz |
|---|---|
| Max Freq.(MHz) | 3000MHz |
| Type | Pallet |
| Typ Output Power(W) | 20W |
| Power Gain(dB) | 22dB |
| VDC(V) | 28 |
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