Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWS05520-10
Description
RFHIC’s RWS05520-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 420 to 470 MHz, the RWS05520-10 yields a power gain of 40 dB. The RWS05520-10 is designed using RFHIC’s GaN-on-SiC high-electron-mobility transistors (HEMT), providing high breakdown voltage, power, and efficiency.
View Product Specification
Aerospace & Defense
Military Radar
General Communications
Test & Research
Specification
| Min Freq.(MHz) | 420MHz |
|---|---|
| Max Freq.(MHz) | 470MHz |
| Typ Output P1dB(dB) | 45dBm |
| Power Gain(dB) | 40dB |
| VDC(V) | 28 |
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