Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RWP2060080-49 is a gallium-nitride (GaN) Wideband Power Amplifier designed for EW applications. Operable from 2,000 ~ 6,000 MHz with an peak output power of 80 W, the RWP2060080-49 is 50 Ohms fully matched for easy design integration.
This wideband amplifier is built using RFHIC’s state-of-the-art GaN-on-SiC transistors, providing industry-leading size, weight, and power (SWaP) for unparalleled performance.
| Min Freq.(MHz) | 2000MHz |
|---|---|
| Max Freq.(MHz) | 6000MHz |
| Type | Pallet |
| Typ Output Power(W) | 80W |
| Power Gain(dB) | 49dB |
| PAE(%) | 22% |
| VDC(V) | 36 |