RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges – only available
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Description
RFHIC’s ETQ2014P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V with a drain efficiency of ...
Frequency0 ~ 6,000MHzOutput Power3.2WGain19dBEfficiency60%StatusProduction
Freq. (MHz)0 ~ 6,000
Pout (W)3
Gain (dB)19 -
Description
RFHIC’s DT12060P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V with a drain efficiency of ...
Frequency0 ~ 6,000MHzOutput Power14.1WGain17dBEfficiency70%StatusProduction
Freq. (MHz)0 ~ 6,000
Pout (W)14
Gain (dB)17 -
Description
The 580W CW RF Power Transistor is designed for particle accelerator and microwave energy applications at 500MHz. This device is suitable for use in CW, pulse and linear applications. This ...
Frequency499 ~ 501MHzOutput Power580.0WEfficiency75%StatusSample available
Freq. (MHz)499 ~ 501 -
Description
RFHIC’s IE24300P is a 300W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24300P provides a high ...
Frequency2,400 ~ 2,500MHzOutput Power300.0WGain11dBEfficiency70%StatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)11 -
Description
RFHIC’s IE24150P is a 150W GaN on SiC transistor designed ideally for industrial heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the IE24150P provides a high ...
Frequency2,400 ~ 2,500MHzOutput Power150.0WGain13dBEfficiency72%StatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)13 -
Description
RFHIC’s IE24200P is a 200W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24200P provides a high ...
Frequency2,400 ~ 2,500MHzOutput Power200.0WGain131dBEfficiency74%StatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)131 -
Description
RFHIC’s IE13550D is a 550W GaN on SiC transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the IE13550D provides a high ...
Frequency1,295 ~ 1,305MHzOutput Power550.0WGain15dBEfficiency79%StatusSample available
Freq. (MHz)1,295 ~ 1,305
Gain (dB)15 -
Description
RFHIC’s IE24100P is a 100W GaN on SiC transistor fabricated with RFHIC’s GaN on SiC technology. Operating from 2400 to 2500 MHz, the IE24100P provides a high gain of 14.6dB ...
Frequency2,400 ~ 2,500MHzOutput Power100.0WGain15dBEfficiency71%StatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)15 -
Description
RFHIC’s IE09150PC is a 150W continuous-wave GaN on SiC transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an 82.5% drain efficiency at ...
Frequency900 ~ 930MHzOutput Power150.0WGain18dBEfficiency83%StatusProduction
Freq. (MHz)900 ~ 930
Gain (dB)18 -
Description
RFHIC’s IE09300PC is a 300W GaN on SiC transistor ideally suited for industrial heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the IE09300PC provides a high ...
Frequency900 ~ 930MHzOutput Power300.0WGain18dBEfficiency80%StatusProduction
Freq. (MHz)900 ~ 930
Gain (dB)18 -
Description
RFHIC’s ET43028P is a 28W GaN on SiC drive transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, the ET43028P provides a ...
Frequency0 ~ 6,000MHzOutput Power28.0WGain15dBEfficiency67%StatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)15 -
Description
RFHIC’s ET43055P is a 55W GaN on SiC drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ET43055P provides a high ...
Frequency0 ~ 6,000MHzOutput Power55.0WGain13dBEfficiency71%StatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)13 -
Description
RFHIC’s ET43014P is a 14W GaN on SiC drive transistor designed ideally for industrial heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, the ET43014P provides a ...
Frequency0 ~ 6,000MHzOutput Power14.0WGain16dBEfficiency64%StatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)16 -
Description
RFHIC’s RT12014P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at 48V with a drain efficiency ...
Frequency0 ~ 6,000MHzOutput Power3.2WGain18dBEfficiency60%StatusProductionFreq. (MHz)0 ~ 6,000
Gain (dB)18 -
Description
RFHIC’s IE36170WD is a discrete GaN on SiC HEMT which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency ...
Frequency3,520 ~ 3,560MHzOutput Power32.0WGain15dBStatusProductionFreq. (MHz)3,520 ~ 3,560
Gain (dB)15 -
Description
RFHIC’s IE27385D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power69.0WGain14dBStatusProduction
Freq. (MHz)2,620 ~ 2,690
Gain (dB)14 -
Description
RFHIC’s IE27330D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power63.0WGain14dBStatusProduction
Freq. (MHz)2,620 ~ 2,690
Gain (dB)14 -
Description
RFHIC’s IE27275D is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency ...
Frequency2,575 ~ 2,635MHzOutput Power50.0WGain14dBStatusProductionFreq. (MHz)2,575 ~ 2,635
Gain (dB)14 -
Description
RFHIC’s IE27220PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power50.0WGain17dBEfficiency75%StatusProductionFreq. (MHz)2,620 ~ 2,690
Gain (dB)17 -
Description
RFHIC’s IE27165PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power40.0WGain17dBEfficiency75%StatusProductionFreq. (MHz)2,620 ~ 2,690
Gain (dB)17 -
Description
RFHIC’s ETQ2028P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V with a drain efficiency of ...
Frequency0 ~ 6,000MHzOutput Power6.3WGain19dBEfficiency60%StatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)19 -
Description
RFHIC’s IE26195WD is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency ...
Frequency2,575 ~ 2,635MHzOutput Power32.0WGain14dBEfficiency75%StatusProduction
Freq. (MHz)2,575 ~ 2,635
Gain (dB)14 -
Description
RFHIC’s IE26085P is a discrete GaN on SiC HEMT which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at 48V with a drain efficiency ...
Frequency2,496 ~ 2,690MHzOutput Power19.0WGain20dBEfficiency70%StatusProduction
Freq. (MHz)2,496 ~ 2,690
Gain (dB)20 -
Description
RFHIC’s IE21385D is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power63.0WGain15dBEfficiency55%StatusProductionFreq. (MHz)2,110 ~ 2,170
Gain (dB)15 -
Description
RFHIC’s IE23195WD is a discrete GaN on SiC HEMT which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at 48V with a drain efficiency ...
Frequency2,300 ~ 2,400MHzOutput Power40.0WGain15dBEfficiency72%StatusProduction
Freq. (MHz)2,300 ~ 2,400
Gain (dB)15 -
Description
RFHIC’s IE21330P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power79.0WGain16dBEfficiency75%StatusProduction
Freq. (MHz)2,110 ~ 2,170
Gain (dB)16 -
Description
RFHIC’s IE21220P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power50.0WGain17dBEfficiency75%StatusProduction
Freq. (MHz)2,110 ~ 2,170
Gain (dB)17 -
Description
RFHIC’s IE21165PE is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power37.0WGain18dBEfficiency72%StatusProductionFreq. (MHz)2,110 ~ 2,170
Gain (dB)18 -
Description
RFHIC’s IE21110P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power25.0WGain18dBEfficiency74%StatusProduction
Freq. (MHz)2,110 ~ 2,170
Gain (dB)18 -
Description
RFHIC’s IE18250D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power45.0WGain17dBStatusProduction
Freq. (MHz)1,805 ~ 1,880
Gain (dB)17 -
Description
RFHIC’s IE18220PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18220PG delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power50.0WGain18dBEfficiency71%StatusProduction
Freq. (MHz)1,805 ~ 1,880
Gain (dB)18 -
Description
RFHIC’s IE19195WD is a discrete GaN on SiC HEMT which operates from 1880 to 2025 MHz. The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency ...
Frequency1,880 ~ 2,025MHzOutput Power32.0WGain17dBStatusProduction
Freq. (MHz)1,880 ~ 2,025
Gain (dB)17 -
Description
RFHIC’s IE18330D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power63.0WGain16dBStatusProduction
Freq. (MHz)1,805 ~ 1,880
Gain (dB)16 -
Description
RFHIC’s IE18330PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330PG delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power74.0WGain16dBEfficiency72%StatusProduction
Freq. (MHz)1,805 ~ 1,880
Gain (dB)16 -
Description
RFHIC’s IE18165P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18165P delivers 165 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power37.0WGain18dBEfficiency77%StatusProduction
Freq. (MHz)1,805 ~ 1,880
Gain (dB)18 -
Description
RFHIC’s IE18085P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18085P delivers 85 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power19.0WGain19dBEfficiency72%StatusProduction
Freq. (MHz)1,805 ~ 1,880
Gain (dB)19 -
Description
RFHIC’s IE08220P is a discrete GaN on SiC HEMT which operates from 758 to 858 MHz. The IE08220P delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency758 ~ 858MHzOutput Power50.0WGain22dBEfficiency75%StatusProduction
Freq. (MHz)758 ~ 858
Gain (dB)22 -
Description
RFHIC’s IE36085W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at 48V with a drain efficiency ...
Frequency3,400 ~ 3,600MHzOutput Power19.0WGain17dBEfficiency68%StatusProduction
Freq. (MHz)3,400 ~ 3,600
Gain (dB)17 -
Description
RFHIC’s IE27330P is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330P delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power79.0WGain15dBEfficiency70%StatusProductionFreq. (MHz)2,620 ~ 2,690
Gain (dB)15 -
Description
RFHIC’s IE26110P is a discrete GaN on SiC HEMT which operates from 2500 to 2690 MHz. The IE26110P delivers 110 W of saturated power at 48V with a drain efficiency ...
Frequency2,500 ~ 2,690MHzOutput Power25.0WGain19dBEfficiency72%StatusProduction
Freq. (MHz)2,500 ~ 2,690
Gain (dB)19 -
Description
RFHIC’s IE21085P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21085P delivers 85 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power19.0WGain21dBEfficiency75%StatusProduction
Freq. (MHz)2,110 ~ 2,170
Gain (dB)21 -
Description
RFHIC’s IE36220W is a discrete GaN on SiC HEMT which operates from 3480 to 3520 MHz. The IE36220W delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency3,480 ~ 3,520MHzOutput Power50.0WGain15dBEfficiency64%StatusProduction
Freq. (MHz)3,480 ~ 3,520
Gain (dB)15 -
Description
RFHIC’s RT12055P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12055P delivers 55 W of saturated power at 48V with a drain efficiency ...
Frequency0 ~ 6,000MHzOutput Power12.6WGain16dBEfficiency60%StatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)16 -
Description
RFHIC’s RT12028P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12028P delivers 28 W of saturated power at 48V with a drain efficiency ...
Frequency0 ~ 6,000MHzOutput Power6.3WGain18dBEfficiency60%StatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)18 -
Description
RFHIC’s IE08165P is a discrete GaN on SiC HEMT which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency ...
Frequency770 ~ 900MHzOutput Power37.0WGain21dBEfficiency77%StatusProduction
Freq. (MHz)770 ~ 900
Gain (dB)21 -
Description
RFHIC’s IE36110W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency ...
Frequency3,400 ~ 3,600MHzOutput Power25.0WGain17dBEfficiency65%StatusProduction
Freq. (MHz)3,400 ~ 3,600
Gain (dB)17
