RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges – only available
RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges – only available from RFHIC.
Description
RFHIC’s IE24300P is a 300W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24300P provides a high ...
Frequency2,400 ~ 2,500MHzOutput Power300WGain11dBEfficiency70%StatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)11Description
RFHIC’s IE24150P is a 150W GaN on SiC transistor designed ideally for industrial heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the IE24150P provides a high ...
Frequency2,400 ~ 2,500MHzOutput Power150WGain13dBEfficiency72%StatusProduction Freq. (MHz)2,400 ~ 2,500
Gain (dB)13Description
RFHIC’s IE24200P is a 200W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24200P provides a high ...
Frequency2,400 ~ 2,500MHzOutput Power200WGain131dBEfficiency74%StatusProduction Freq. (MHz)2,400 ~ 2,500
Gain (dB)131Description
RFHIC’s IE13550D is a 550W GaN on SiC transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the IE13550D provides a high ...
Frequency1,295 ~ 1,305MHzOutput Power550WGain15dBEfficiency79%StatusSample available Freq. (MHz)1,295 ~ 1,305
Gain (dB)15Description
RFHIC’s IE24100P is a 100W GaN on SiC transistor fabricated with RFHIC’s GaN on SiC technology. Operating from 2400 to 2500 MHz, the IE24100P provides a high gain of 14.6dB ...
Frequency2,400 ~ 2,500MHzOutput Power100WGain15dBEfficiency71%StatusProduction Freq. (MHz)2,400 ~ 2,500
Gain (dB)15Description
RFHIC’s IE09150PC is a 150W continuous-wave GaN on SiC transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an 82.5% drain efficiency at ...
Frequency900 ~ 930MHzOutput Power150WGain18dBEfficiency83%StatusProduction Freq. (MHz)900 ~ 930
Gain (dB)18Description
RFHIC’s IE09300PC is a 300W GaN on SiC transistor ideally suited for industrial heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the IE09300PC provides a high ...
Frequency900 ~ 930MHzOutput Power300WGain18dBEfficiency80%StatusProduction Freq. (MHz)900 ~ 930
Gain (dB)18Description
RFHIC’s ET43028P is a 28W GaN on SiC drive transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, the ET43028P provides a ...
Frequency0 ~ 6,000MHzOutput Power28WGain15dBEfficiency67%StatusProduction Freq. (MHz)0 ~ 6,000
Gain (dB)15Description
RFHIC’s ET43055P is a 55W GaN on SiC drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ET43055P provides a high ...
Frequency0 ~ 6,000MHzOutput Power55WGain13dBEfficiency71%StatusProduction Freq. (MHz)0 ~ 6,000
Gain (dB)13Description
RFHIC’s ET43014P is a 14W GaN on SiC drive transistor designed ideally for industrial heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, the ET43014P provides a ...
Frequency0 ~ 6,000MHzOutput Power14WGain16dBEfficiency64%StatusProduction Freq. (MHz)0 ~ 6,000
Gain (dB)16Description
RFHIC’s RT12014P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at 48V with a drain efficiency ...
Frequency0 ~ 6,000MHzOutput Power3WGain18dBEfficiency60%StatusProductionFreq. (MHz)0 ~ 6,000
Gain (dB)18Description
RFHIC’s IE36170WD is a discrete GaN on SiC HEMT which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency ...
Frequency3,520 ~ 3,560MHzOutput Power32WGain15dBStatusProductionFreq. (MHz)3,520 ~ 3,560
Gain (dB)15Description
RFHIC’s IE27385D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power69WGain14dBStatusProduction Freq. (MHz)2,620 ~ 2,690
Gain (dB)14Description
RFHIC’s IE27330D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power63WGain14dBStatusProduction Freq. (MHz)2,620 ~ 2,690
Gain (dB)14Description
RFHIC’s IE27275D is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency ...
Frequency2,575 ~ 2,635MHzOutput Power50WGain14dBStatusProductionFreq. (MHz)2,575 ~ 2,635
Gain (dB)14Description
RFHIC’s IE27220PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power50WGain17dBEfficiency75%StatusProductionFreq. (MHz)2,620 ~ 2,690
Gain (dB)17Description
RFHIC’s IE27165PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power40WGain17dBEfficiency75%StatusProductionFreq. (MHz)2,620 ~ 2,690
Gain (dB)17Description
RFHIC’s ETQ2028P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V with a drain efficiency of ...
Frequency0 ~ 6,000MHzOutput Power6WGain19dBEfficiency60%StatusProduction Freq. (MHz)0 ~ 6,000
Gain (dB)19Description
RFHIC’s IE26195WD is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency ...
Frequency2,575 ~ 2,635MHzOutput Power32WGain14dBEfficiency75%StatusProduction Freq. (MHz)2,575 ~ 2,635
Gain (dB)14Description
RFHIC’s IE26085P is a discrete GaN on SiC HEMT which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at 48V with a drain efficiency ...
Frequency2,496 ~ 2,690MHzOutput Power19WGain20dBEfficiency70%StatusProduction Freq. (MHz)2,496 ~ 2,690
Gain (dB)20Description
RFHIC’s IE21385D is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power63WGain15dBEfficiency55%StatusProductionFreq. (MHz)2,110 ~ 2,170
Gain (dB)15Description
RFHIC’s IE23195WD is a discrete GaN on SiC HEMT which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at 48V with a drain efficiency ...
Frequency2,300 ~ 2,400MHzOutput Power40WGain15dBEfficiency72%StatusProduction Freq. (MHz)2,300 ~ 2,400
Gain (dB)15Description
RFHIC’s IE21330P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power79WGain16dBEfficiency75%StatusProduction Freq. (MHz)2,110 ~ 2,170
Gain (dB)16Description
RFHIC’s IE21220P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power50WGain17dBEfficiency75%StatusProduction Freq. (MHz)2,110 ~ 2,170
Gain (dB)17Description
RFHIC’s IE21165PE is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power37WGain18dBEfficiency72%StatusProductionFreq. (MHz)2,110 ~ 2,170
Gain (dB)18Description
RFHIC’s IE21110P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power25WGain18dBEfficiency74%StatusProduction Freq. (MHz)2,110 ~ 2,170
Gain (dB)18Description
RFHIC’s IE18250D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power45WGain17dBStatusProduction Freq. (MHz)1,805 ~ 1,880
Gain (dB)17Description
RFHIC’s IE18220PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18220PG delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power50WGain18dBEfficiency71%StatusProduction Freq. (MHz)1,805 ~ 1,880
Gain (dB)18Description
RFHIC’s IE19195WD is a discrete GaN on SiC HEMT which operates from 1880 to 2025 MHz. The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency ...
Frequency1,880 ~ 2,025MHzOutput Power32WGain17dBStatusProduction Freq. (MHz)1,880 ~ 2,025
Gain (dB)17Description
RFHIC’s IE18330D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power63WGain16dBStatusProduction Freq. (MHz)1,805 ~ 1,880
Gain (dB)16Description
RFHIC’s IE18330PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330PG delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power74WGain16dBEfficiency72%StatusProduction Freq. (MHz)1,805 ~ 1,880
Gain (dB)16Description
RFHIC’s IE18165P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18165P delivers 165 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power37WGain18dBEfficiency77%StatusProduction Freq. (MHz)1,805 ~ 1,880
Gain (dB)18Description
RFHIC’s IE18085P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18085P delivers 85 W of saturated power at 48V with a drain efficiency ...
Frequency1,805 ~ 1,880MHzOutput Power19WGain19dBEfficiency72%StatusProduction Freq. (MHz)1,805 ~ 1,880
Gain (dB)19Description
RFHIC’s IE08220P is a discrete GaN on SiC HEMT which operates from 758 to 858 MHz. The IE08220P delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency758 ~ 858MHzOutput Power50WGain22dBEfficiency75%StatusProduction Freq. (MHz)758 ~ 858
Gain (dB)22Description
RFHIC’s IE36085W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at 48V with a drain efficiency ...
Frequency3,400 ~ 3,600MHzOutput Power19WGain17dBEfficiency68%StatusProduction Freq. (MHz)3,400 ~ 3,600
Gain (dB)17Description
RFHIC’s IE27330P is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330P delivers 330 W of saturated power at 48V with a drain efficiency ...
Frequency2,620 ~ 2,690MHzOutput Power79WGain15dBEfficiency70%StatusProductionFreq. (MHz)2,620 ~ 2,690
Gain (dB)15Description
RFHIC’s IE26110P is a discrete GaN on SiC HEMT which operates from 2500 to 2690 MHz. The IE26110P delivers 110 W of saturated power at 48V with a drain efficiency ...
Frequency2,500 ~ 2,690MHzOutput Power25WGain19dBEfficiency72%StatusProduction Freq. (MHz)2,500 ~ 2,690
Gain (dB)19Description
RFHIC’s IE21085P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21085P delivers 85 W of saturated power at 48V with a drain efficiency ...
Frequency2,110 ~ 2,170MHzOutput Power19WGain21dBEfficiency75%StatusProduction Freq. (MHz)2,110 ~ 2,170
Gain (dB)21Description
RFHIC’s IE36220W is a discrete GaN on SiC HEMT which operates from 3480 to 3520 MHz. The IE36220W delivers 220 W of saturated power at 48V with a drain efficiency ...
Frequency3,480 ~ 3,520MHzOutput Power50WGain15dBEfficiency64%StatusProduction Freq. (MHz)3,480 ~ 3,520
Gain (dB)15Description
RFHIC’s RT12055P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12055P delivers 55 W of saturated power at 48V with a drain efficiency ...
Frequency0 ~ 6,000MHzOutput Power13WGain16dBEfficiency60%StatusProduction Freq. (MHz)0 ~ 6,000
Gain (dB)16Description
RFHIC’s RT12028P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12028P delivers 28 W of saturated power at 48V with a drain efficiency ...
Frequency0 ~ 6,000MHzOutput Power6WGain18dBEfficiency60%StatusProduction Freq. (MHz)0 ~ 6,000
Gain (dB)18Description
RFHIC’s IE08165P is a discrete GaN on SiC HEMT which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency ...
Frequency770 ~ 900MHzOutput Power37WGain21dBEfficiency77%StatusProduction Freq. (MHz)770 ~ 900
Gain (dB)21Description
RFHIC’s IE36110W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency ...
Frequency3,400 ~ 3,600MHzOutput Power25WGain17dBEfficiency65%StatusProduction Freq. (MHz)3,400 ~ 3,600
Gain (dB)17
