Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
AB02ABCAB
Description
RFHIC’s AB02ABCAB / AB02ABCAB1 is a 120W, 50-3000 MHz GaN-on-SiC power transistor designed for weather radar, marine radar, and L, S-band military radar system applications. The AB02ABCAB is designed with RFHIC’s state of the art gallium-nitride (GaN) on SiC HEMT, providing high breakdown voltage, wide bandwidth, and 67% drain efficiency at 28V, and is available in both ceramic package options (NS-BS01 / NS-BS01P1).
View Product Specification
Weather Radar System
Marine Radar System
L, S-Band Radar System
Military Communications
Electronic Warfare
Specification
| Min Freq.(MHz) | 50MHz |
|---|---|
| Max Freq.(MHz) | 3000MHz |
| Typ Output Power(W) | 100W |
| Saturation Power(W) | 120W |
| Power Gain(dB) | 14dB |
| Efficiency | 67% |
| VDC(V) | 28 |
| Package | NS-BS01P1 / NS-BS01 |
| Package Type | Flange |