RFHIC’s GaN-on-SiC solutions featuring MaxLinear’s DPD at IMS 2024

South Korea, Gwacheon – June 18, 2024 – RFHIC (KOSDAQ:A218410) 

RFHIC demonstrates latest 40W and 80W GaN SiC solutions featuring MaxLinear’s DPD at IMS 2024 Washington

RFHIC will showcase a live demonstration of their latest 40W and 80W GaN on SiC transistor solutions at IMS 2024, featuring MaxLinear’s Digital Pre-Distortion (DPD) technology.

In line with industry’s current focus on energy savings, the demonstration will highlight a comprehensive range of integrated power amplifier solutions tailored for 5G macrocell applications including Open RAN O-RUs.

RFHIC’s power amplifier models combined with MaxLinear’s high-performance DPD linearization technology enables RF developers to deliver high output power amplifier solutions with both outstanding efficiency and emissions performance.
These integrated PA and DPD solutions enable a new generation of power efficient RU products, significantly reducing product size and weight and, most importantly, dramatically enhancing energy savings (and thereby reducing MNO energy costs) by 30% or more compared to other solutions.

By pre-testing and validating with MaxLinear’s highly integrated single-chip RU SoC, Sierra, RFHIC and MaxLinear together offer end-to-end reference designs that lower the development investment required by radio vendors and enable faster time to market for new RU products.

At IMS, RFHIC will demo the following products utilizing MaxLinear’s cutting-edge DPD solution:

RFHIC’s ID19801D and ID22801D models are designed to operate at peak powers of nearly 800W and average powers of 100W, covering Band 2 and 66 frequencies. Both models are equipped with our new high-power package resulting in 30-40% space reduction as well as eliminating mismatches between packages and providing cost benefits.

RFHIC’s ID41461DR model provides outstanding linearity and is the only 40W solution meeting FCC standards over a 400MHz bandwidth in the n77 band.

RFHIC’s turn-key EVB solution provides a 50-ohm matched two-stage driver and a main stage GaN on SiC transistor, complete with a circulator at the output end. This design minimizes test result variations due to experimental conditions and is easily integrated directly into user systems. The new offerings also mark a significant advancement over previous models, featuring a much smaller design footprint that allows for faster and easier integration.

“Combining RFHIC technology with MaxLinear SoC-powered linearization provides the highest performance solutions available on the market for high power macrocell RU use cases,” said Puneet Sethi, MaxLinear’s Vice President & General Manager of Wireless Infrastructure. “And using our PA characterization tools, we enable our customers to rapidly optimize PA performance, reducing the optimization cycle from multiple months to a few days.”

 

Demo Information

When:

Tuesday, 18 June 2024: 09:30-17:00

Wednesday, 19 June 2024: 09:30-18:00

Thursday, 20 June 2024: 09:30-15:00

 

Where: International Microwave Symposium, Washington Walter E Washington Convention Center (RFHIC Booth #610)

To learn more, please click here to contact us.

 

About RFHIC Corporation

RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com. RFHIC® is a registered trademark.

About MaxLinear

MaxLinear, Inc. (Nasdaq: MXL) is a leading provider of radio frequency (RF), analog, digital, and mixed-signal integrated circuits for access and connectivity, wired and wireless infrastructure, and industrial and multimarket applications. MaxLinear is headquartered in Carlsbad, California. For more information, please visit https://www.maxlinear.com/.

For more information, please contact:

RFHIC Corporation

Grace Cho
Manager, Global Sales & Marketing
Email: marketing@rfhic.com

 

MaxLinear, Inc.

Matthew Lea
Head of Public Relations
+1 760/415.2529

[Technology] GaN Wideband Amplifiers for Counter Drone Applications

South Korea, Gwacheon – June 3rd, 2024 – RFHIC (KOSDAQ:A218410) 

RFHIC Enhances Drone Defense Capabilities with Advanced GaN Wideband Amplifiers for
Counter-UAS Applications

RFHIC has introduced a comprehensive range of GaN wideband amplifiers, tailored for integration into counter unmanned aircraft systems (C-UAS). As the conflict in Ukraine demonstrates, commercial drones pose an escalating threat to both military and civilian targets by providing a cost-effective means for surveillance and attacks.

RWP15080-20, 700 – 2,700 MHz, 100 W, GaN Solid-State Wideband Amplifier

C-UAS are fundamentally designed around three core functions: Detection and Tracking, Identification, and Neutralization/Interdiction. These systems work to first detect and track the drone, identify it, and then either neutralize or intercept it.

Methods for drone neutralization or damage typically involve kinetic, directed energy, or electromagnetic responses. RFHIC’s GaN wideband amplifiers play a crucial role in these systems by facilitating an effective electromagnetic response to drone threats. When embedded into C-UAS systems, these amplifiers support various defensive measures, including:

RFHIC’s GaN wideband amplifiers are not only tactically proven but also offer reliability as standard off-the-shelf products with options for customization.

GaN Wideband Amplifers for C-UAS systems

Part Number

Min Freq.
[MHz]

Max Freq.
[MHz]

Pout [W]

Pout [dBm]

Gain [dB]

Dimension
(W x D x H, mm)

RWP03160-2R

20

800

150

51.8

41.8

120 x 65 x 16.7 

RWP05020-10

20

1000

20

43

40

70 x 50.8 x 17.3

RWP05040-10

20

1000

40

46

38

70 x 50.8 x 17.3

RFW2500H10-28

20

2500

4

36

17

38 x 50.8 x 12.5

RWP15040-1H

500

2500

50

47

38

98.8 x 75 x 25 

RWP15040-10

500

2500

50

47

38

72 x 50.8 x 16.8

RWP17050-10

700

2700

50

47

37

72 x 50.8 x 16.8

RWP15080-10

700

2500

100

50

53

134 x 105 x 30

RWP15080-20

700

2700

100

50

53

134 x 105 x 30

RUM43020-10

2000

6000

20

43

35

170 x 64 x 21.5

RWP25020-50

2000

3000

25

44

25

70 x 50.8 x 17.1

RWP2060050-48

2000

6000

65

48

48

175 x 90 x 23

RUM43010-10

2500

6000

10

40

29

130 x 64 x 21.5

 

RFHIC offers an extensive portfolio of wideband amplifiers designed for Counter-UAS applications, with operation capabilities up to 6 GHz. Utilizing our advanced Gallium Nitride (GaN) technology, our products deliver higher breakdown voltage, broader bandwidth, and superior efficiency.

To learn more about our GaN wideband amplifiers, contact us!

About RFHIC Corporation

RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com. RFHIC® is a registered trademark.

[Product] RFHIC’s Launches New GaN MMICs for Satellite Communications!

South Korea, Gwacheon – April 5th, 2024 – RFHIC (KOSDAQ:A218410) 

RFHIC is excited to announce our plan to release new GaN MMICs, Transistors and Low Noise Amplifiers for various applications, including satellite communications and wireless infrastructure.

GaN PA MMICs


Click to view full image

Covering a frequency range of C-band, X-band, Ku-band, K-band and Ka-band with an output power up to 80 W, our new GaN Power Amplifier MMICs deliver outstanding solutions for next-gen satellite communications and defense applications.They will be available in surface-mount QFN, CM1012-6L, or CM1012-6L packaging options.

Built with RFHIC’s state-of-the-art gallium nitride (GaN) technology, the GaN PA MMICs provide significant advancements compared to conventional gallium arsenide (GaAs) MMICs.
With higher power density capabilities, higher efficiencies and higher voltage breakdowns, our GaN PA MMICs deliver greater levels of RF power while maintaining efficiency and linearity.
GaN devices exhibit superior thermal properties compared to GaAs, leading to improved reliablity and longevity. The superior thermal conductivity of GaN allows for efficient dissipation of heat,
reducing the risk of overheating. This thermal robustness is particularly advantageous in harsh operating environemnts and in cases of extended usage.
Additionally, our GaN PA MMICs offer far broader bandwidth capabilities, enabling solutions over a wider frequency range compared to GaAs MMICs.

Our GaN PA MMICs represent a significant leap forward in RF technology, offering an array of advantages over their GaAs counterparts. With higher power density capabilities, superior thermal properties and broader bandwidths, GaN MMICs stand as the preferred solution for high-performance RF applications, delivering excellent efficiency, reliability, and versatility.
Scheduled for launch in the second quarter of 2024.

GaN-on-SiC Transistors


Click to view full image

RFHIC’s new internally-matched GaN Transistors are designed for S, C and X-band operation, delivering an output power of up to 350 W. They will be available in air-cavity or hermetically-sealed packages and are suitable for wireless infrastructure applications in 4G LTE and 5G macro base stations. Scheduled for launch in the second quarter of 2024.

Low Noise Amplifier MMICs

Click to view full image

RFHIC’s upcoming GaN low-noise amplifiers (LNAs) are designed for operation from L to Ka-band with noise figures in the range of 1 to 2.4 dB. They will be available in module (hermetic), QFN, or ceramic QFN packaging options. These LNAs are designed for wireless communications and defense applications including WiMax, repeaters, base stations, radar, jammers, EW, and RF Subsystems. Customized solutions are available upon customer request. Scheduled for launch in the second quarter of 2024.

To learn more about our new products, click here to contact us!

About RFHIC:

RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.

RFHIC® is a registered trademark

Media Contact:

[Technology] GaN Solid State for Aerial Threat Countermeasures

South Korea, Anyang – February 8th, 2024 – RFHIC (KOSDAQ:A218410) 

 

Utilizing RFHIC’s GaN Solid State Technology for Aerial Threat Countermeasures

In the contemporary landscape marked by escalating aerial threats, such as drones and missiles, propelled by ongoing global conflicts and heightened political tensions. There is an urgent need for effective countermeasures. The proliferation of drone technology further accentuates this necessity, placing a premium on advanced solutions like high-power microwave (HPM) technology, vital for addressing the challenge of swarm drone and aerial attacks in various military scenarios.

 

Types of Countermeasure Equipment

Countermeasures against aerial threats can be broadly categorized into three types:

 

Understanding Radio Frequency (RF) Jammers

An RF jammer is a device, available in static, mobile, or handheld forms, designed to emit substantial amounts of radio frequency energy. This energy is directed towards aerial threats like drones or missiles, effectively masking their controlling signals. The application of an RF jammer is pivotal in disabling the communication and operational capabilities of these threats.

What is High-Power Microwave (HPM)?

HPM devices are instrumental in generating electromagnetic pulses (EMPs) potent enough to disrupt or destroy the electronics of aerial threats, including drones and missiles. These devices typically incorporate antennas to focus the EMP, aiming to minimize collateral damage.

HPM devices belong to a broader category of directed energy technologies, which also encompasses laser systems. They function by directing electromagnetic radiation at targets, attacking through various entry points, including antennas or indirect routes like charging ports.

 

The Advantage of GaN Solid State Technology


The integration of GaN (Gallium Nitride) SiC (Silicon Carbide) power amplifiers, as opposed to traditional LDMOS based amplifiers, marks a significant advantage for high power microwave systems. This shift enables manufacturers to achieve superior performance metrics, resulting in systems that are more compact, efficient, cost-effective, and lighter. Additionally, GaN Solid State Power Amplifiers (SSPA) enhance system efficiency, leading to clearer, more precise, and extended detection ranges. This technological evolution positions RFHIC’s GaN Solid State Technology as a frontrunner in the field of advanced aerial threat countermeasures, offering a wide range of cutting-edge GaN solutions for modern defense challenges.

 

RFHIC’s GaN Product Portfolio for Countermeasure Systems

Showcasing RFHIC’s Broad Product Range in GaN Wideband and High-Power Continuous Wave Systems for Countermeasure Applications.
RFHIC stands at the forefront of innovation with its extensive array of GaN (Gallium Nitride) wideband and high-power continuous wave (CW) systems, meticulously engineered for countermeasure applications. Our product lineup is designed to cater to a broad spectrum of defense needs, addressing the evolving challenges in aerial threat countermeasures. The key highlights of our product range include:


1. RFHIC’s Wideband Amplifiers:
 
Unmatched Bandwidth for Countermeasure Applications

RFHIC’s GaN wideband amplifiers stand out in the defense technology market for their unparalleled bandwidth range, offering exceptional versatility across various countermeasure scenarios. These amplifiers excel in simultaneously managing multiple threat types, a testament to their wideband features. Ideal for commercial off-the-shelf (COTS) solutions, these amplifiers operate efficiently across a wide frequency spectrum, from 20 MHz to 18 GHz, and boast impressive power capabilities of up to multi-megawatts. This makes them an optimal choice for defense applications requiring robust, multi-faceted countermeasure capabilities.

2. RFHIC’s High Power CW Amplifiers and Systems
 
Robust and Reliable for Extended Operations

RFHIC excels in the field of high-power, continuous wave (CW) GaN solid-state power amplifiers and systems. RFHIC’s high-power amplifier and systems are engineered for prolonged and sustained operations, ensuring consistent and dependable performance. Ideal for extended engagement scenarios, RFHIC’s high-power CW amplifiers and systems are particularly effective in neutralizing threats over long durations. Catering to diverse needs, we offer commercial off-the-shelf (COTS) and customizable solutions operable in L-band, S-band, C-band, and X-band with power capabilities scaling up to multi kilowatts.

 

Customization and Flexibility

 

RFHIC takes pride in not just offering standard off-the-shelf systems but also in providing tailor-made solutions to meet specific client needs. Our commitment to customization allows us to work closely with our clients, understanding their unique challenges and operational environments, to develop solutions that are not only effective but also seamlessly integrate into their existing frameworks. Whether it’s modifying the power output, frequency range, or integrating unique features, our team of experts is equipped to deliver solutions that are customized to the finest detail. This approach ensures that our clients have access to the most suitable technology that aligns perfectly with their strategic objectives and operational demands. RFHIC’s comprehensive range of GaN wideband and high-power CW systems, combined with our ability to offer customized solutions, positions us as a versatile and dependable partner in the realm of advanced defense countermeasures. Our technology is not just about meeting the current standards but setting new benchmarks in aerial threat neutralization.

To learn more about our electronic warfare solutions, click here to contact us!

 

About RFHIC:

RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.

RFHIC® is a registered trademark

Media Contact:

[Product] OptiGaN Transistor Series for 4G, 4G LTE & Open RAN

South Korea, Anyang – December 13th, 2023 – RFHIC (KOSDAQ:A218410) 

Introducing RFHIC’s high-performance, budget-friendly OptiGaN transistor series for 4G, 4G LTE, and
Open RAN applications.

Designed as efficient, internally matched, asymmetrical GaN high-electron-mobility transistors (HEMT), the OptiGaN transistors are an ideal choice for users seeking to explore the advanced capabilities of GaN-on-SiC technology for their 4G, 4G LTE, and Open RAN systems without stretching their budget.
Applications include macro cell base stations, multi carrier applications, distributed antenna systems, remote radio heads, and point-to-(multi)point links.

Discover your ideal wireless infrastructure solution with RFHIC’s OptiGaN transistors, where affordability meets high-quality performance.

Benefits of GaN-on-SiC Technology(Click to view full image)

Unlike other transistor technologies, GaN provides the following unique advantages that make it an ideal candidate for designing RF power amplifiers for 4G, 4G LTE and Open RAN applications:

Built with RFHIC’s GaN-on-SiC technology, the OptiGaN transistors are a perfect fit for customers seeking high performance at a budget-conscious price for their 4G, 4G LTE, and
Open RAN needs.


(Click to view full images)

Click here to download the full OptiGaN transistor catalog.
Click here to get a quote or contact us.

 

About RFHIC:

RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.

RFHIC® is a registered trademark

Media Contact:

[Product] SDM GaN Hybrid Power Amplifier Series Demo Video

South Korea, Anyang – September 18h, 2023 – RFHIC (KOSDAQ: A218410)

Introducing RFHIC’s new SDM GaN Hybrid Power Amplifier Module series for 4G LTE and 5G systems!
Developed for drive amplifier applications, the SDM series is built with RFHIC’s GaN-on-SiC technology.

In this video, we set up an evaluation test for one of the products in the SDM series, the SDM36005-30H (3,400 ~ 3,800MHz, 60W).
The digital pre-distortion (DPD) performances of the amplifier were tested both in isolation and in connection with a 40W transistor, the ID36461D.
The SDM36005-30H demonstrated excellent linearity, with an adjacent channel power (ACP) ranging from 58 to 60dBc in isolation, and 52 to 54dBc in connection with a 40W transistor.

Features of the SDM series include:

The SDM series lineup is also highly versatile, making it suitable for various 4G LTE & 5G applications including:

Full lineup of the SDM GaN Hybrid Power Amplifier series:

For more information, don’t hesitate to contact us at: RFHIC Contact Us Page

About RFHIC:

RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.

RFHIC® is a registered trademark

Media Contact:

[Product] RFHIC’s Microwave Generator for Nanoparticle Heating

South Korea, Anyang – August 1th, 2023 – RFHIC (KOSDAQ: A218410)

Checkout our 2.45GHz, 3kW GaN solid-state microwave generator, the
RIU243K0-40TG, in action!
In the demonstration video below, you can watch the RIU243K0-40TG
heating nanoparticles under atmospheric pressures.

Our microwave generator managed to reach 800°C within 5 minutes. Note that the output power used was only 800W under this setting,
where as the RIU243K0-40TG has a maximum output of 3,000W!
This means that even higher temperatures can be reached within a shorter period of time.
RFHIC’s microwave technology can be used for various nanotechnology applications, including:

Enjoy the video, and if you have any questions regarding the 2.45GHz, 3kW Microwave Generator shown in this video, or any other questions,
don’t hesitate to contact us!

About RFHIC:

RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.

RFHIC® is a registered trademark

Media Contact: