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AB02AAGAB

Transistors - Wireless Infrastructure
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Description

RFHIC’s AB02AAGAB is a 60W, DC–4 GHz, GaN on SiC RF power transistor designed for broadband amplifiers, WiMAX, LTE, WCDMA, and GSM applications. The AB02AAGAB is designed with RFHIC’s state of the art gallium-nitride (GaN) on SiC HEMT, providing excellent thermal stability and high breakdown voltage.

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Datasheet
Broadband Amplifiers
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency

Specification

Typ Output Power(W) 47.8W
Saturation Power(W) 60W
Power Gain(dB) 11.8dB
Efficiency 72%
VDC(V) 28
Package NS-BS01
Package Type Flange