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H019

Transistors - Wireless Infrastructure
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Description

RFHIC’s H019 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 3400 to 3800 MHz.The H019 delivers 15.8 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

Specification

Min Freq.(MHz) 3400MHz
Max Freq.(MHz) 3800MHz
Typ Output Power(W) 0.8W
Saturation Power(W) 15.8W
Power Gain(dB) 18.2dB
Efficiency 14.5%
VDC(V) 48
Package DFN66726L-Q2
Package Type Surface Mount