Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
ID39084W
Description
RFHIC’s ID39084W is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 4100 MHz.The ID39084W delivers 84 W of saturated power at 48V with a drain efficiency of 64% at Psat, 3.9 GHz.The ID39084W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
Doherty Amplifier
5G NR Systems
Specification
| Min Freq.(MHz) | 3700MHz |
|---|---|
| Max Freq.(MHz) | 4100MHz |
| Typ Output Power(W) | 3W |
| Saturation Power(W) | 94.4W |
| Power Gain(dB) | 14.3dB |
| VDC(V) | 48 |
| Package | RF12002KR3 |
| Package Type | Flange |
| Drain Efficiency(%) | 64% |
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