Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RRM090100250-54A
Description
The RRM090100250-54A is a 250W, pulsed GaN solid-state power amplifier operable at X-band. The RRM090100250-54A is fabricated with RFHIC’s state-of-the-art gallium nitride (GaN) technology providing excellent efficiency and high breakdown voltage. The RRM090100250-54A provides a power gain of 54dB with a power-added efficiency of 25%. The RRM090100250-54A are cost-effective replacements for traveling wave tube (TWT) amplifiers and offer longer life, better efficiencies, and reduced size and weight than their TWT counterparts.RFHIC’s GaN-based pulsed power amplifiers can be used in numerous military and high-end commercial applications, including radar, communication transmitters, and jamming systems.
View Product Specification
Weather Radar
Ocean Surveillance Radar
Ground Surveillance Radar
SAR
Transmitter Systems
Specification
| Band | X-band |
|---|---|
| Min Freq.(MHz) | 9000MHz |
| Max Freq.(MHz) | 10000MHz |
| Type | Module |
| Typ Output Power(W) | 250W |
| Power Gain(dB) | 54dB |
| PAE(%) | 25% |
| VDC(V) | 50 |
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