Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
The RIP25030-10G is a 30 W, 2,400 – 2,500 MHz, GaN solid-state microwave generator designed ideally for microwave heating and plasma generation applications. The RIP25030-10G is a module type generator that provides continuous wave (CW) and or pulse output power adjustable from 10 to 30 W.
This GaN solid-state microwave generator is built using RFHIC’s state-of-the-art gallium-nitride (GaN) on silicon-carbide (SiC) transistors, providing high power levels and high system efficiency.
The RIP25030-10G is equipped with a VCO synthesizer that generates a signal without an external source. The compact generator is designed ideally for microwave heating, drying, plasma generation, and medical applications.
View Product Specification| Min Freq.(MHz) | 2400MHz |
|---|---|
| Max Freq.(MHz) | 2500MHz |
| Output Power(W) | 30W |
| DC RF Efficiency(%) | 65% |
| VDC(V) | 48 |
| Operating Mode | CW/Pulse |
| Cooling | Air |
| Dimension(mm) | 45(W) x 24(D) x 10.8(H) |
| Weight | 0.3kg |