Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RIM281K2-20
Description
The RIM281K2-20 is a 1200W, GaN solid-state power amplifier designed for high power industrial, scientific, and medical (ISM)
applications. The solid-state power amplifier is operable from 2856 MHz and is built using RFHIC’s cutting edge gallium- nitride
(GaN) on SiC HEMT providing excellent efficiency and breakdown voltage.
The GaN Solid state Power Amplifier (SSPA) is suitable for use in pulse applications. This high efficiency rugged device is targeted to
replace industrial magnetrons and other vacuum tubes currently powering industrial heating, drying, microwave CVD and sintering.
Microwave Heating and Drying
RF & Microwave Cooking
Linear Accelerators
Plasma Lighting
Waste Management
Carbon Fiber Manufacturing
Specification
| Max Freq.(MHz) | 2856MHz |
|---|---|
| Power Gain(dB) | 60dB |
| Efficiency | 45% |
| VDC(V) | 50 |
| VSWR | 6:1 |
| Cooling | Air |
| Dimension(mm) | 254(W) x 204(D) x 28(H) |
| Weight | 2kg |