Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP1516500-57
Description
RFHIC’s RWP1516500-57 is a 500 W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) wideband amplifier operates from 1,555 to 1,610 MHz and offers high reliability and ruggedness. The RWP1516500-57 is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
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Radar Systems
Jamming Systems
Drones/UAVs Systems
Satellite Communication
Specification
| Band | L-Band |
|---|---|
| Min Freq.(MHz) | 1555MHz |
| Max Freq.(MHz) | 1610MHz |
| Min Output Power | 450W |
| Typ Output Power(W) | 500W |
| Typ Output P1dB(dB) | 55.7dBm |
| Power Gain(dB) | 57dB |
| VDC(V) | 48 |
| Cooling | Forced Air |
| Dimension(mm) | 220 (W) x 31.1(H) x 96 (D) |