RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
| Part Number | Datasheet | Max Freq.(MHz) | Typ Output Power(W) | Saturation Power(W) | Power Gain(dB) | Efficiency | VDC(V) | Package | Package Type | Min Freq.(MHz) |
| H008C11A | 3800 | 26 | 174 | 14.1 | 44 | 48 | RF12001DHKR3 | Flange | 3400 | |
| ID36461D | 3600 | 56.2 | 460 | 14.4 | - | 48 | RF24008DKR3 | Flange | 3400 | |
| IE36085W | 3600 | 19 | 85 | 17.3 | 35 | 48 | RF12002KR3 | Flange | 3400 | |
| ID26461D | 2690 | 56.2 | 447 | 16.1 | 57 | 48 | RF24008DKR3 | Flange | 2620 | |
| H030C11D | 2690 | 79 | 398 | 11.9 | 47 | 48 | RF24010DKR3 | Flange | 2620 | |
| H029C11A | 2690 | 54 | 310 | 14.1 | 50 | 48 | RF18010DKR3 | Flange | 2620 | |
| H028P1 | 2690 | 3.2 | 33.1 | 18.6 | 23 | 48 | DFN66726L-Q2 | Surface Mount | 2620 | |
| H002C11A | 2630 | 32 | 195 | 14.4 | 53 | 48 | RF12001DHKR3 | Flange | 2580 | |
| ID26411D | 2620 | 60 | 410 | 15.2 | 51.1 | 48 | RF24008DKR3 | Flange | 2570 | |
| H018C11A | 2630 | 40 | 316 | 14.4 | 50 | 48 | RF18010DKR3 | Flange | 2520 | |
| H002C12A | 2690 | 32 | 195 | 14.4 | 53 | 48 | RF12001DHKR3-PK2 | Flange | 2496 | |
| ID23461D | 2400 | 56.2 | 460 | 16.2 | 56 | 48 | RF24008DKR3 | Flange | 2300 | |
| H029C12A | 2400 | 48 | 302 | 13.5 | 48 | 48 | RF18010DKR3 | Flange | 2300 | |
| H007C11A | 2400 | 40 | 240 | 15.3 | 55 | 48 | RF12001DHKR3 | Flange | 2300 |