RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
| Part Number | Datasheet | Max Freq.(MHz) | Typ Output Power(W) | Saturation Power(W) | Power Gain(dB) | Efficiency | VDC(V) | Package | Package Type | Min Freq.(MHz) |
| ID22801D | 2170 | 104.7 | 800 | 15.9 | 53 | 48 | RF26009DKR3 | Flange | 2110 | |
| ID22701D | 2170 | 81.3 | 700 | 15.8 | 53.5 | 48 | RF26009DKR3 | Flange | 2110 | |
| ID22461D | 2170 | 56.2 | 460 | 17 | 58 | 48 | RF24008DKR3 | Flange | 2110 | |
| ID22441D | 2170 | 53.7 | 407 | 17.4 | 58 | 48 | RF24008DKR3 | Flange | 2110 | |
| H020C13D | 2170 | 79 | 468 | 14.7 | 54 | 48 | RF24010DKR3 | Flange | 2110 | |
| ID22411D | 2200 | 54 | 410 | 17.5 | - | 48 | RF24008DKR3 | Flange | 2110 | |
| IE21330P | 2170 | 79 | 330 | 16 | 40 | 48 | NS-AS01 | Flange | 2110 | |
| IE21220P | 2170 | 50 | 220 | 18 | 40 | 48 | NS-AS01 | Flange | 2110 | |
| IE21385D | 2170 | 63 | 385 | 15 | 56 | 48 | RF24001DKR3 | Flange | 2110 | |
| H007C11B | 2500 | - | 220 | 15.0 | 55 | 48 | RF12001DHKR3 | Flange | 2000 | |
| ID19411D | 2020 | 55 | 410 | 16.7 | - | 48 | RF24008DKR3 | Flange | 1995 | |
| ID19701D | 1995 | 81.3 | 692 | 16.4 | 49 | 48 | RF26009DKR3 | Flange | 1930 | |
| ID19801D | 1995 | 107.2 | 800 | 15.5 | - | 48 | RF26009DKR3 | Flange | 1930 | |
| H020C12D | 2000 | 79 | 398 | 14.4 | 47 | 48 | RF24010DKR3 | Flange | 1930 |