RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
| Part Number | Datasheet | Max Freq.(MHz) | Typ Output Power(W) | Saturation Power(W) | Power Gain(dB) | Efficiency | VDC(V) | Package | Package Type | Min Freq.(MHz) |
| ID19601D | 1995 | 81.3 | 600 | 16.2 | 48.2 | 48 | RF24009DKR3 | Flange | 1930 | |
| ID20411D | 2200 | 56.2 | 410 | 16 | 48.1 | 48 | RF24008DKR3 | Flange | 1930 | |
| H005C11D | 2025 | 30 | 170 | 17 | 48 | 48 | RF12001DHKR3-PK2 | Flange | 1880 | |
| H001C11A | 2025 | 32 | 195 | 16.9 | 48 | 48 | RF12001DKR3-PK2 | Flange | 1880 | |
| ID18801D | 1880 | 107.2 | 800 | 16.4 | 54.8 | 48 | RF26009DKKR3 | Flange | 1805 | |
| ID18701D | 1880 | 81.3 | 700 | 17.3 | 54 | 48 | RF24008DKR3 | Flange | 1805 | |
| ID18461D | 1880 | 56.2 | 437 | 17.4 | 58 | 48 | RF24008DKR3 | Flange | 1805 | |
| H020C11D | 1880 | 79 | 468 | 14.6 | 54 | 48 | RF24010DKR3 | Flange | 1805 | |
| H016C12A | 1880 | 50 | 320 | 13.9 | 56 | 48 | RF18010DKR3 | Flange | 1805 | |
| H016C11A | 2200 | 44 | 316 | 15.4 | 50 | 48 | RF18010DKR3 | Flange | 1805 | |
| H009C11A | 1880 | 63 | 385 | 15.1 | 55 | 48 | RF24010DKR3 | Flange | 1805 | |
| H006C11D | 1880 | 45 | 220 | 15.8 | 54 | 48 | RF12001DHKR3 | Flange | 1805 | |
| IE18085P | 1880 | 19 | 90 | 19 | 37 | 48 | RF12002KR3 | Flange | 1805 | |
| IE18330PG | 1880 | 74 | 330 | 16 | 40 | 48 | NS-AS01 | Flange | 1805 |