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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Max Freq.(MHz)	Power Gain(dB)	VSWR	Output Power(W)	Efficiency	Min Freq.(MHz)	Typ Output Power(W)	VDC(V)	Package	Package Type	Saturation Power(W)	Drain Efficiency(%)	Min Output Power
H008C11A		3800	14.1	-	-	44	3400	26	48	RF12001DHKR3	Flange	174	-	-	-	-	-
ID36461D		3600	14.4	-	-	-	3400	56.2	48	RF24008DKR3	Flange	460	47	-	46	460	14.4
IE36085W		3600	17.3	-	-	35	3400	19	48	RF12002KR3	Flange	85	-	-	35.0	85	17.3
ID26461D		2690	16.1	-	-	57	2620	56.2	48	RF24008DKR3	Flange	447	-	-	-	-	-
H030C11D		2690	11.9	-	-	47	2620	79	48	RF24010DKR3	Flange	398	-	-	-	-	-
H029C11A		2690	14.1	-	-	50	2620	54	48	RF18010DKR3	Flange	310	-	-	-	-	-
H028P1		2690	18.6	-	-	23	2620	3.2	48	DFN66726L-Q2	Surface Mount	33.1	-	-	-	-	-
H002C11A		2630	14.4	-	-	53	2580	32	48	RF12001DHKR3	Flange	195	-	-	-	-	-
ID26411D		2620	15.2	-	-	51.1	2570	60	48	RF24008DKR3	Flange	410	-	-	51.1	410	15.2
H018C11A		2630	14.4	-	-	50	2520	40	48	RF18010DKR3	Flange	316	-	-	-	-	-
H002C12A		2690	14.4	-	-	53	2496	32	48	RF12001DHKR3-PK2	Flange	195	-	-	-	-	-
IE24100P		2500	14.8	-	100	-	2400	100	50	-	Flange	-	72	-	73.3	-	-
IE24150P		2500	13.3	-	150	-	2400	150	50	-	Flange	-	73.3	-	73.3	-	-
IE24200P		2500	13.8	-	200	-	2400	200	50	-	Flange	-	74.9	-	76.6	-	-

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RF Transistors