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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Max Freq.(MHz)	Power Gain(dB)	VSWR	Output Power(W)	Efficiency	Min Freq.(MHz)	Typ Output Power(W)	VDC(V)	Package	Package Type	Saturation Power(W)	Drain Efficiency(%)	Min Output Power
IE24300P		2500	12.3	-	300	-	2400	300	50	-	Flange	-	71.2	-	71.2	-	-
ID23461D		2400	16.2	-	-	56	2300	56.2	48	RF24008DKR3	Flange	460	-	-	-	-	-
H029C12A		2400	13.5	-	-	48	2300	48	48	RF18010DKR3	Flange	302	-	-	-	-	-
H007C11A		2400	15.3	-	-	55	2300	40	48	RF12001DHKR3	Flange	240	-	-	-	-	-
ID24330WD		2500	13.5	-	347	-	2300	338	48	-	Flange	347	47.2	343	65.0	-	-
ID22801D		2170	15.9	-	-	53	2110	104.7	48	RF26009DKR3	Flange	800	-	-	-	-	-
ID22701D		2170	15.8	-	-	53.5	2110	81.3	48	RF26009DKR3	Flange	700	-	-	-	-	-
ID22461D		2170	17	-	-	58	2110	56.2	48	RF24008DKR3	Flange	460	-	-	-	-	-
ID22441D		2170	17.4	-	-	58	2110	53.7	48	RF24008DKR3	Flange	407	-	-	-	-	-
H020C13D		2170	14.7	-	-	54	2110	79	48	RF24010DKR3	Flange	468	-	-	-	-	-
ID22411D		2200	17.5	-	-	-	2110	54	48	RF24008DKR3	Flange	410	51	-	51.8	410	17.5
IE21330P		2170	16	-	-	40	2110	79	48	NS-AS01	Flange	330	-	-	40.3	330	15.9
IE21220P		2170	18	-	-	40	2110	50	48	NS-AS01	Flange	220	-	-	40.0	220	17.4
IE21385D		2170	15	-	-	56	2110	63	48	RF24001DKR3	Flange	385	-	-	55.7	385	14.6

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RF Transistors