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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Max Freq.(MHz)	Power Gain(dB)	VSWR	Output Power(W)	Efficiency	Min Freq.(MHz)	Typ Output Power(W)	VDC(V)	Package	Package Type	Saturation Power(W)	Drain Efficiency(%)	Min Output Power
H009C11A		1880	15.1	-	-	55	1805	63	48	RF24010DKR3	Flange	385	-	-	-	-	-
H006C11D		1880	15.8	-	-	54	1805	45	48	RF12001DHKR3	Flange	220	-	-	-	-	-
IE18085P		1880	19	-	-	37	1805	19	48	RF12002KR3	Flange	90	-	-	40.5	85	19.4
IE18330PG		1880	16	-	-	40	1805	74	48	NS-AS01	Flange	330	-	-	41.5	330	15.4
IE18220PG		1880	18.1	-	-	41	1805	50	48	NS-AS01	Flange	220	-	-	42.7	220	18.3
H017		2700	17.9	-	-	30	1800	2	48	DFN66726L-Q2	Surface Mount	28.2	-	-	-	-	-
H014C11A		2700	13	-	-	49	1800	71	48	RF24010DKR3	Flange	398	-	-	-	-	-
H009C12A		2200	14.7	-	-	52	1800	79	48	RF24010DKR3	Flange	398	-	-	-	-	-
ID18411D		1880	18	-	-	54	1800	56.2	48	RF24008DKR3	Flange	410	-	-	53.5	410	17.6
IE13550D		1305	14.9	-	550	-	1295	550	50	-	Flange	-	79.2	-	79.5	-	-
IE09150PC		930	17.6	-	150	-	900	150	50	-	Flange	-	83.1	-	83.11	-	-
IE09300PC		930	18	-	300	-	900	300	50	-	Flange	-	80.2	-	80.21	-	-
IE08165P		900	51	-	-	40	770	37	48	NS-AS01	Flange	165	-	-	40.6	165	18.1
H012C12D		821	17.5	-	-	56	758	79	48	RF24010DKR3	Flange	440	-	-	-	-	-

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RF Transistors