Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s DiaFlux™ 180 is a polycrystalline CVD diamond heat spreader grown by plasma chemical vapor deposition. It provides a high thermal conductivity of 1,800 W/m·K (at 25 °C) along with electrically insulating properties, and is available in 200 / 350 / 500 µm thicknesses with custom sizes and forms. The DiaFlux 180 is suitable for thermal management of a wide range of high-power devices, including AI accelerators, high-power GaN HEMTs, RF and microwave devices, SiC power electronics, and laser diodes.
View Product Specification| Size | Ø3–100 mm (round) / 3×3–70×70 mm (square) |
|---|---|
| Edges | Laser cut |
| Edge Features | <0.2 mm |
| Lateral Tolerance | ±0.2 mm |
| Form | Custom Plate, Chip, Heat Spreader, Wafer |
| Growth Method | Plasma Chemical Vapor Deposition |
| Structure | Cubic, Polycrystalline |
| Thermal Conductivity | 1,800 W/m·K (at 25 °C) |
| Thickness | 200 / 350 / 500 µm (±20 µm) |
| Surface Roughness (Ra) | <20 nm |
| Electrical Property | Electrically Insulating |
| Grade | High Performance Thermal Grade |