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RSEC15I33CN

Transistors - Defense & Aerospace
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Description

RFHIC’s RSEC15I33CN is a 320W, L-band, GaN SiC transistor designed for broadband amplifiers, test instrumentation, and pulse amplifier applications. The RSEC15I33CN is designed with RFHIC’s state of the art gallium-nitride (GaN) on SiC HEMT, providing excellent thermal stability and high breakdown voltage.

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Datasheet
Broadband Amplifier
Test Instrumentation
Multi-Band, Multi-Mode
Multi-Carrier
Pulse Amplifier

Specification

Min Freq.(MHz) 1000MHz
Max Freq.(MHz) 2000MHz
Output Power(W) 320W
Power Gain(dB) 14.5dB
Drain Efficiency(%) 60%
VDC(V) 50
Package Type RF12002KR3