Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) transistors for Defense & Aerospace applications, covering L-, S-, C-, X-, Ku-, and Ka-bands. These devices support a wide range of high-power RF systems, including radar, electronic warfare (EW), and mission-critical communications.
| Part Number | Datasheet | Min Freq.(MHz) | Max Freq.(MHz) | Power Gain(dB) | Drain Efficiency(%) | VDC(V) | Package Type | Output Power(W) |
| D080CCNH | 9800 | 10300 | 7.2 | 37 | 40 | Flange | 50 | |
| D001CCNH | 9200 | 10000 | 7.8 | 40 | 50 | Flange | 70 | |
| D046A1C | 2900 | 3300 | 13.7 | 62 | 50 | MP24001 | 180 | |
| RSEC15I33CN | 1000 | 2000 | 14.5 | 60 | 50 | RF12002KR3 | 320 |