Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP06040-60
Description
RFHIC’s RWP06040-60 is a gallium-nitride on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 1000 MHz, the RWP06040-60 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP06040-60 is designed to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.
View Product Specification
Communication Systems
Laser Drive Amplifier
Radio Power Amplifier
Wideband Jammer
Specification
| Min Freq.(MHz) | 500MHz |
|---|---|
| Max Freq.(MHz) | 1000MHz |
| Type | Pallet |
| Typ Output Power(W) | 40W |
| Power Gain(dB) | 42dB |
| VDC(V) | 28 |
Related Products
RWP2060080-50 ›
RFHIC’s RWP2060080-50 is a 100W, gallium-nitride (GaN) Wideband Power amplifier designed for various electronic warfare applications. This gallium-nitr...
RWP25020-50 ›
RFHIC’s RWP25020-50 is a gallium-nitride on silicon carbide (GaN-on-SiC), S-band, wideband amplifier suited for broadcasting and communication system a...
RWP05020-10 ›
RFHIC’s RWP05020-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
RWP03040-10 ›
RFHIC’s RWP03040-10 is a gallium-nitride-on silicon carbide (GaN-on-SiC) wideband amplifier suited for broadcasting and communication system applicatio...
