Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RF Energy
The world runs on power, and we see a future where the world can do much more with less with RFHIC's gallium nitride (GaN) solid state microwave solutions
Defense & Aerospace
Elevate the performance of your Defense & Aerospace systems with RFHIC's field-proven gallium nitride (GaN) solid-state RF & Microwave devices
Company
RFHIC is a global leader in providing radio frequency (RF) & microwave (MW) solutions utilizing gallium nitride (GaN) for wireless infrastructure, commercial and military radar, and RF energy applications
RFHIC's mission is to enlighten industries with RF and Microwave advancements - to expedite a future enhanced by technological innovation.
Meaning a better connected, safer, stronger world for generations.
Our Founders
A diverse environment of intuitive thinkers and doers continually reimagining and reinventing what’s possible with GaN RF & Microwave technology.
RFHIC, which stands for Radio, Frequency, Hybrid, Integrated, Circuit corporation, was founded by Dr. Samuel Cho (Co-Founder & CTO) and David Cho (Co-Founder & CEO) in 1999 to address the needs of high-performing, efficient, and cost-effective RF & Microwave Components for the South Korean market.
30 Years
Of RF & Microwave Expertise
Where it Started
Our History
1999
RFHIC Established
RFHIC, which stands for Radio, Frequency, Hybrid, Integrated Circuit was established in August 1999. It started with an incurable need for cost-effective GaAs components for satellite applications within South Korea.
2004
Strategic Partnership with Foundry
Entered into a strategic partnership with gallium nitride (GaN) on silicon carbide (SiC) foundry service provider. Won a major CATV related contract with Motorola USA.
2008
Strategic Partnership with Cree
Entered into a strategic partnership with Cree (now known as Wolfspeed) for gallium nitride (GaN) on silicon carbide (SiC) epi wafers.
2009
First Ever GaN PA
Released our first ever gallium nitride (GaN) on silicon carbide (SiC) power amplifier pallets and hybrid products for the wireless infrastructure market.
2010
GaN on SiC for Telecommunications
Supplied high volumes of gallium nitride (GaN) on silicon carbide (SiC) power amplifiers for the telecommunications LTE RRH domestic market.
2011
Entered into Defense and Radar
Expanded our business line for global defense and radar applications. Supplied high volumes of gallium nitride (Gan) on silicon carbide (SiC) pallet amplifiers for various overseas radar systems
2012
Established RFHIC US
Established RFHIC US Corporation - a separate entity of RFHIC Corporation in Noth Carolina in 2012
2013
Presidential Award
Awarded the 14th New Radio & Broadcasting Presidential Award
2015
New Anyang Facility
Supplied high volumes of gallium nitride (GaN) transistors for overseas LTE systems. Moved into our brand new HQ facility in Anyang
2017
Listed on KOSDAQ
Listed on the Korean Stock Exchange (KOSDAQ) stock number 218410 in 2017
2019
KOSDAQ Rising Star
Selected as KOSDAQ Rising Star by the Korean Stock Exchange (KOSDAQ) - and winning the best 4th industrial innovation award by KODSAQ Association
2021
Acquisition of RFMTL & RFSYS
Acquired RFMTL a global leader in multi-ceramic packaging and RFSYS a global leader in brazing technology
2023
Gwacheon Facility
Expanding our defense and RF energy business in a new facility in Gwacheon South Korea. Building ready by fall of 2023
2024
New HQ in Gawcheon
Moved into our brand new HQ facility in Gwacheon
We aim to enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation - with the power of gallium nitride (GaN) RF & Microwave technology.
