Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RWP03160-2R
Description
RFHIC’s RWP03160-2R is a 150 W, gallium-nitride (GaN) Wideband Power Amplifier designed for various defense applications. This gallium-nitride (GaN) wideband amplifier operates from 20 to 800 MHz and offers high reliability and ruggedness. The RWP03160-2R is fabricated using RFHIC’s state-of-the-art gallium-nitride on silicon carbide (GaN-on-SiC) transistors, providing the industry’s best size, weight, and power (SWaP).
View Product Specification
General Purposes
Communications
Jamming
Specification
| Min Freq.(MHz) | 20MHz |
|---|---|
| Max Freq.(MHz) | 800MHz |
| Type | Pallet |
| Typ Output Power(W) | 160W |
| Power Gain(dB) | 44dB |
| VDC(V) | 36 |
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