Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RRP099104080-49
Description
HPA (High Power Amplifiers) are essential for high-power RF applications. RFHIC’s RRP099104080-49 is a GaN-based X-band power amplifier designed for radar, satellite communication, and aerospace applications. Operating from 9900 to 10400 MHz, the RRP099104080-49 achieves 49dB of gain with an efficiency of 25%. RRP099104080-49 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency.
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Radar system
Jamming system
Specification
| Band | X-Band |
|---|---|
| Min Freq.(MHz) | 9900MHz |
| Max Freq.(MHz) | 10400MHz |
| Type | Pallet |
| Typ Output Power(W) | 80W |
| Power Gain(dB) | 49dB |
| PAE(%) | 25% |
| VDC(V) | 40 |