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RSSEC30N10BN

Transistors - Wireless Infrastructure
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Description

The RSSEC30N10BN is a 15 W GaN-on-SiC HEMT power transistor operating from DC up to 6 GHz, housed in RFHIC’s NS-CS01E flanged package. Operating at 28 V, the device delivers 15 W typical saturated output power with 65% drain efficiency, and 3 W make the RSSEC30N10BN well suited for WiMAX, LTE, WCDMA, and GSM applications, including broadband amplifiers, test instrumentation, multi-band/multi-mode/multi-carrier systems, and high-efficiency Doherty amplifier designs.

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Datasheet
WiMAX, LTE, WCDMA, GSM
Broadband Amplifier
Test Instrumentation
Multi-Band, Multi-Mode
Multi-Carrier

Specification

Max Freq.(MHz) 6000MHz
Typ Output Power(W) 3W
Saturation Power(W) 15W
Power Gain(dB) 14dB
Efficiency 32%
VDC(V) 28
Package NS-CS01E
Package Type Flange