Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC recently participated in Carbon Korea 2024, held from October 23 to 25 at the aT Center in Seoul, Korea, where we showcased our latest GaN solid-state microwave technology. Carbon Korea 2024 is an event that highlights innovations in carbon technology across various industries.
During the conference at the exhibition, Sang-Jin Kim, the leader of RFHIC’s Technical Sales Team, delivered a presentation titled “Development of Carbon Material-Based Microwave Absorbers and Heaters.” This presentation provided valuable insights into RFHIC’s advancements in carbon material application technology and demonstrated our commitment to research and development. The presentation concluded successfully, capturing the keen interest of attendees.
Carbon Korea 2024 offered RFHIC a valuable opportunity to connect with industry professionals and reaffirm our commitment to pioneering solutions that maximize efficiency and performance. We extend our gratitude to everyone who visited our booth, and we look forward to future collaborations that will drive new possibilities in carbon technology!
Should you require more detailed information or further assistance, please do not hesitate to Contact Us.
About RFHIC:
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.
RFHIC® is a registered trademark
Media Contact:
- Grace Cho
- RFHIC Corporation
- Manager, Global Sales & Marketing
- marketing@rfhic.com
[Exhibition] RFHIC’s Participation in the 2024 K-Battery Show
RFHIC proudly took part in the 2024 K-Battery Show, held from September 25th to 27th at KINTEX in Ilsan, Korea. As one of the largest exhibitions in Korea focused on the battery industry, the K-Battery Show brought together leading battery manufacturers and industry professionals from around the globe to exchange insights on the latest trends and future technologies.
During the event, RFHIC showcased its advanced GaN (Gallium Nitride) solid-state microwave generator solutions. Our high-power, high-efficiency ONE-STOP solutions—designed to maximize energy efficiency and enhance productivity in battery manufacturing processes—captured significant attention. We also demonstrated the versatile applications of RF energy across various industries, including battery manufacturing, fostering in-depth discussions with industry experts about potential collaborations.
The exhibition provided RFHIC with valuable insights into the evolving global battery market and further solidified our technological leadership. We remain dedicated to developing innovative GaN solutions tailored to the diverse needs of industries worldwide.
We extend our heartfelt thanks to all those who visited our booth at the K-Battery Show and showed interest in our solutions. We look forward to your continued support as RFHIC continues to grow and lead the way in advanced technology solutions.
Should you require more detailed information or further assistance, please do not hesitate to Contact Us.
About RFHIC:
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.
RFHIC® is a registered trademark
Media Contact:
- Grace Cho
- RFHIC Corporation
- Manager, Global Sales & Marketing
- marketing@rfhic.com
RFHIC • RFSYS Research Exchange Meeting to Strengthen Synergy in the Defense Industry
RFHIC and RFSYS successfully held a research exchange meeting focused on strengthening collaboration and promoting mutual growth within the defense industry. Both companies exchanged insights on their advanced technologies and key projects during the meeting, while identifying opportunities for future cooperation.
RFHIC presented its core business areas and defense-related projects, while RFSYS showcased its achievements and goals within the defense sector, laying a strong foundation for continued partnership. Through this exchange, both companies are committed to working together to advance defense technologies and deliver innovative solutions.
This event marked an important milestone in driving the growth of the defense industry. We look forward to ongoing collaboration and appreciate your continued interest and support as we move forward together.
Should you require more detailed information or further assistance, please do not hesitate to Contact Us.
About RFHIC:
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.
RFHIC® is a registered trademark
Media Contact:
- Grace Cho
- RFHIC Corporation
- Manager, Global Sales & Marketing
- marketing@rfhic.com
[Exhibition] Meteorological Technology World Expo with RFHIC
RFHIC Successfully Participates in the Meteorological Technology World Expo 2024
RFHIC participated in the Meteorological Technology World Expo 2024, held in Vienna, Austria, from September 24th to 26th. At this event, we showcased our latest GaN solid-state power amplifiers and high-power transmitter solutions, specifically optimized for weather radar systems.
The featured products are designed to meet the demanding requirements of modern weather prediction systems, providing high power and efficiency to enhance the overall performance of weather radars. These advanced technologies are expected to play a pivotal role in the future development of meteorological observation and forecasting systems.
We extend our sincere gratitude to all those who visited our booth at the exhibition. As we continue to drive innovation in meteorological technology, we remain committed to delivering solutions that contribute to a better, more informed future.
Should you require more detailed information or further assistance, please do not hesitate to Contact Us.
About RFHIC:
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.
RFHIC® is a registered trademark
Media Contact:
Grace Cho
RFHIC Corporation
Manager, Global Sales & Marketing
marketing@rfhic.com
[Exhibition] IMS Washington D.C. 2024 with RFHIC
RFHIC participated in the IMS (International Microwave Symposium) 2024 held in Washington D.C. from June 18 to 20.
As the world’s most prestigious event focusing on RF and microwave technology and their various applications, we presented our latest GaN-on-SiC product portfolio for defense & aerospace, wireless infrastructure, and RF energy applications.
We also had the opportunity to showcase a live demonstration of our 40 W and 80 W transistor products for 5G macrocell applications including Open RAN O-RUs.
Connecting with both old and new customers while discussing the latest industry trends with key experts, we gained invaluable insights into the evolving needs and challenges faced by the RF and microwave technology landscape. With our cutting-edge GaN-on-SiC technology, RFHIC will continue to lead innovation and drive key industries forward.
We will also be attending IMS 2025, expected to be held in San Francisco, US next year. Looking forward to meeting you all!
Should you require more detailed information or further assistance, please do not hesitate to Contact Us.
About RFHIC:
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.
RFHIC® is a registered trademark
Media Contact:
- Grace Cho
- RFHIC Corporation
- Manager, Global Sales & Marketing
- marketing@rfhic.com
RFHIC and Rohde & Schwarz Korea Forge a Strategic MOU for GaN Technology Development
Gwacheon, South Korea, June 27th, 2024 – RFHIC Corporation (KOSDAQ:218410), a pioneer in the GaN RF & Microwave industry, have entered a strategic memorandum of understanding (MOU) focused on advancing gallium nitride (GaN) technology across defense, aerospace, and telecommunications sectors. This agreement marks a significant milestone that will combine the expertise and knowledge of both companies to foster innovation and extend their influence across various industries.
Under this MOU, Rohde & Schwarz Korea will provide RFHIC with state-of-the-art measurement solutions, including vector network analyzers, signal generators, spectrum analyzers, and oscilloscopes. These test & measurement instruments are expected to significantly enhance the verification processes in RFHIC’s GaN technology development and research initiatives.
Rohde & Schwarz Korea, the Korean subsidiary of Rohde & Schwarz that globally respected German company with a 90-year history, is renowned for delivering cutting-edge measurement solutions across telecommunications, broadcasting, electronics, and defense sectors. The company is recognized worldwide for its innovative technologies and quality products.
RFHIC, known for its pioneering role in high-power RF and microwave solid state power amplifiers (SSPA) utilizing GaN technology, collaborates closely in fields including defense, aerospace, and telecommunications. RFHIC’s SSPA products are widely utilized across these sectors, underlining the company’s leading position in the market.
Kim Tae-hoon, the Managing director of Rohde & Schwarz Korea, remarked, “This MOU between Rohde & Schwarz Korea and RFHIC will elevate Korea’s GaN technology development to a new level. The advanced measurement solutions of Rohde & Schwarz will play a pivotal role in RFHIC’s ongoing research and development efforts.”
RFHIC’s CEO, David Cho, also expressed optimism, stating, “Our collaboration with Rohde & Schwarz Korea will accelerate the development of GaN-based SSPA technology, significantly impacting the rapidly growing sectors of defense, aerospace, and telecommunications.”
Both companies are committed to maximizing their strengths through this collaboration, aiming to showcase further advanced technologies. For more details, visit the official websites and blog of Rohde & Schwarz Korea and RFHIC.
About RFHIC Corporation
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com. RFHIC® is a registered trademark.
About Rohde & Schwarz
Rohde & Schwarz is striving for a safer and connected world with its Test & Measurement, Technology Systems and Networks & Cybersecurity Divisions. For 90 years, the global technology group has pushed technical boundaries with developments in cutting-edge technologies. The company’s leading-edge products and solutions empower industrial, regulatory and government customers to attain technological and digital sovereignty. The privately owned, Munich based company can act independently, long-term and sustainably. On June 30, 2023, Rohde & Schwarz had around 13,800 employees worldwide.
R&S® is a registered trademark of Rohde & Schwarz GmbH & Co. KG.
RFHIC Corporation
Grace Cho
Manager, Global Sales & Marketing
marketing@rfhic.com
Media Contacts
Rohde & Schwarz Korea
Jihong Choi
Manager, Marketing
Jihong.choi@rohde-schwarz.com
South Korea, Gwacheon – June 18, 2024 – RFHIC (KOSDAQ:A218410)
RFHIC demonstrates latest 40W and 80W GaN SiC solutions featuring MaxLinear’s DPD at IMS 2024 Washington
RFHIC will showcase a live demonstration of their latest 40W and 80W GaN on SiC transistor solutions at IMS 2024, featuring MaxLinear’s Digital Pre-Distortion (DPD) technology.
In line with industry’s current focus on energy savings, the demonstration will highlight a comprehensive range of integrated power amplifier solutions tailored for 5G macrocell applications including Open RAN O-RUs.
RFHIC’s power amplifier models combined with MaxLinear’s high-performance DPD linearization technology enables RF developers to deliver high output power amplifier solutions with both outstanding efficiency and emissions performance.
These integrated PA and DPD solutions enable a new generation of power efficient RU products, significantly reducing product size and weight and, most importantly, dramatically enhancing energy savings (and thereby reducing MNO energy costs) by 30% or more compared to other solutions.
By pre-testing and validating with MaxLinear’s highly integrated single-chip RU SoC, Sierra, RFHIC and MaxLinear together offer end-to-end reference designs that lower the development investment required by radio vendors and enable faster time to market for new RU products.
At IMS, RFHIC will demo the following products utilizing MaxLinear’s cutting-edge DPD solution:
- SDM19007-30H + ID19801D (Band 2, 1930-1995MHz )
- SDM21007-30H + ID22801D (Band 66, 2110-2200MHz)
- SDM39005-30H + ID41461DR (n77, 3700-4100MHz )
RFHIC’s ID19801D and ID22801D models are designed to operate at peak powers of nearly 800W and average powers of 100W, covering Band 2 and 66 frequencies. Both models are equipped with our new high-power package resulting in 30-40% space reduction as well as eliminating mismatches between packages and providing cost benefits.
RFHIC’s ID41461DR model provides outstanding linearity and is the only 40W solution meeting FCC standards over a 400MHz bandwidth in the n77 band.
RFHIC’s turn-key EVB solution provides a 50-ohm matched two-stage driver and a main stage GaN on SiC transistor, complete with a circulator at the output end. This design minimizes test result variations due to experimental conditions and is easily integrated directly into user systems. The new offerings also mark a significant advancement over previous models, featuring a much smaller design footprint that allows for faster and easier integration.
“Combining RFHIC technology with MaxLinear SoC-powered linearization provides the highest performance solutions available on the market for high power macrocell RU use cases,” said Puneet Sethi, MaxLinear’s Vice President & General Manager of Wireless Infrastructure. “And using our PA characterization tools, we enable our customers to rapidly optimize PA performance, reducing the optimization cycle from multiple months to a few days.”
Demo Information
When:
Tuesday, 18 June 2024: 09:30-17:00
Wednesday, 19 June 2024: 09:30-18:00
Thursday, 20 June 2024: 09:30-15:00
Where: International Microwave Symposium, Washington Walter E Washington Convention Center (RFHIC Booth #610)
To learn more, please click here to contact us.
About RFHIC Corporation
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com. RFHIC® is a registered trademark.
About MaxLinear
MaxLinear, Inc. (Nasdaq: MXL) is a leading provider of radio frequency (RF), analog, digital, and mixed-signal integrated circuits for access and connectivity, wired and wireless infrastructure, and industrial and multimarket applications. MaxLinear is headquartered in Carlsbad, California. For more information, please visit https://www.maxlinear.com/.
For more information, please contact:
RFHIC Corporation
Grace Cho
Manager, Global Sales & Marketing
Email: marketing@rfhic.com
MaxLinear, Inc.
Matthew Lea
Head of Public Relations
+1 760/415.2529
South Korea, Gwacheon – June 3rd, 2024 – RFHIC (KOSDAQ:A218410)
RFHIC Enhances Drone Defense Capabilities with Advanced GaN Wideband Amplifiers for
Counter-UAS Applications
RFHIC has introduced a comprehensive range of GaN wideband amplifiers, tailored for integration into counter unmanned aircraft systems (C-UAS). As the conflict in Ukraine demonstrates, commercial drones pose an escalating threat to both military and civilian targets by providing a cost-effective means for surveillance and attacks.
RWP15080-20, 700 – 2,700 MHz, 100 W, GaN Solid-State Wideband Amplifier
C-UAS are fundamentally designed around three core functions: Detection and Tracking, Identification, and Neutralization/Interdiction. These systems work to first detect and track the drone, identify it, and then either neutralize or intercept it.
Methods for drone neutralization or damage typically involve kinetic, directed energy, or electromagnetic responses. RFHIC’s GaN wideband amplifiers play a crucial role in these systems by facilitating an effective electromagnetic response to drone threats. When embedded into C-UAS systems, these amplifiers support various defensive measures, including:
- Jamming: Interrupting the communication links to and from the drone, thereby disrupting its control.
- Spoofing: Manipulating the drone’s GPS to either seize control and safely land it, or to reroute it.
- Directed Energy Weapons: Employing lasers to physically damage or incapacitate the drone.
- Electronic Warfare Tactics: Using electronic methods to interfere with the drone’s operational capabilities.
RFHIC’s GaN wideband amplifiers are not only tactically proven but also offer reliability as standard off-the-shelf products with options for customization.
GaN Wideband Amplifers for C-UAS systems
|
Part Number |
Min Freq. |
Max Freq. |
Pout [W] |
Pout [dBm] |
Gain [dB] |
Dimension |
|
20 |
800 |
150 |
51.8 |
41.8 |
120 x 65 x 16.7 |
|
|
20 |
1000 |
20 |
43 |
40 |
70 x 50.8 x 17.3 |
|
|
20 |
1000 |
40 |
46 |
38 |
70 x 50.8 x 17.3 |
|
|
20 |
2500 |
4 |
36 |
17 |
38 x 50.8 x 12.5 |
|
|
500 |
2500 |
50 |
47 |
38 |
98.8 x 75 x 25 |
|
|
500 |
2500 |
50 |
47 |
38 |
72 x 50.8 x 16.8 |
|
|
700 |
2700 |
50 |
47 |
37 |
72 x 50.8 x 16.8 |
|
|
700 |
2500 |
100 |
50 |
53 |
134 x 105 x 30 |
|
|
RWP15080-20 |
700 |
2700 |
100 |
50 |
53 |
134 x 105 x 30 |
|
2000 |
6000 |
20 |
43 |
35 |
170 x 64 x 21.5 |
|
|
2000 |
3000 |
25 |
44 |
25 |
70 x 50.8 x 17.1 |
|
|
2000 |
6000 |
65 |
48 |
48 |
175 x 90 x 23 |
|
|
RUM43010-10 |
2500 |
6000 |
10 |
40 |
29 |
130 x 64 x 21.5 |
RFHIC offers an extensive portfolio of wideband amplifiers designed for Counter-UAS applications, with operation capabilities up to 6 GHz. Utilizing our advanced Gallium Nitride (GaN) technology, our products deliver higher breakdown voltage, broader bandwidth, and superior efficiency.
To learn more about our GaN wideband amplifiers, contact us!
About RFHIC Corporation
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com. RFHIC® is a registered trademark.
[Company] RFHIC enters strategic partnership with SweGaNGwacheon, South Korea, – April 15th, 2024 – RFHIC (KOSDAQ:A218410)
RFHIC Embarks on a New Venture with SweGaN: A Leap Towards Next-Generation Semiconductor Solutions
RFHIC Corporation, a pioneer in the GaN RF & Microwave industry, proudly announces a strategic investment in SweGaN AB, renowned for its cutting-edge development of Gallium Nitride on Silicon Carbide (GaN on SiC) epitaxial wafers, joins forces with RFHIC to usher in a new era of semiconductor excellence.
RFHIC has led the industry in creating and producing a diverse range of devices and high-powered subsystems based on GaN SiC technology. These products serve critical roles in various sectors, including 5g-advanced and 6g telecommunications, defense radar / electronic warfare, industrial applications, and beyond. Our strategic investment in SweGaN AB highlights our dedication to innovation and strengthens our supply chain. This move further enhances our position as a competitive leader in the RF and microwave markets.
We are confident that the combination of RFHIC’s technical expertise and resources with SweGaN’s QuanFINE® epitaxial technology positions us to accelerate the development of high-performance GaN semiconductors for a variety of high-power sectors. This strategic investment reflects our united vision of shaping the future with efficient and innovative semiconductor technologies.
In response to the surging demand for high-power, highly efficient semiconductors across a broad spectrum of applications — from 5g-advanced and 6g telecommunications and defense radars to high-power industrial uses — RFHIC is rapidly advancing its efforts. We are significantly expanding our internal research and development, enhancing our manufacturing capabilities, and diversifying our range of technological materials to meet and exceed market needs.
– Dr. Samuel Cho, CTO, and co-founder of RFHIC Corporation,
“As RFHIC maps its future strategy for GaN semiconductors including accelerated market demand for products in 5G-advanced, 6G, satellite communication and more, SweGaN’s high-performance 6-inch GaN epiwafers for RF and power semiconductors – with exemplary high-power efficiency – provide a strong fit for our technological roadmap and diversification of gallium nitride epitaxial wafer suppliers. SweGaN’s unique epitaxial wafer development and manufacturing technology is a key factor in the high performance of gallium nitride semiconductors that we can tap in developing new products in the 4GHz ultra-high frequency band increasingly sought after by the market.”
– Jr-Tai Chen, CEO and Founder at SweGaN,
“With the accelerating demand for high-performance semiconductor materials to power a multitude of applications and increase the efficiency in an energy-conscious world, the new equity investment will support SweGaN’s capacity expansion plan of its best-in-class GaN-on-SiC epitaxial wafers and tap joint product developments with RFHIC. We are very proud to partner with RFHIC, a leading RF GaN innovator who has the passion and commitment to amplify the world by providing top-efficiency and cutting-edge GaN solutions.”
In collaboration, RFHIC and SweGaN plan to address the increasing demand for GaN semiconductors and initiate new product developments for a variety of markets.
About RFHIC Corporation
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com. RFHIC® is a registered trademark.
About SweGaN
SweGaN specializes in the development and production of engineered benchmark-performance Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, leveraging our innovative QuanFINE® growth technology. Our QuanFINE® material boasts exceptional performance, empowering our customers to swiftly address the dynamic challenges posed by next-generation high power and high-frequency devices, and to craft forward-looking solutions. We supply and offer tailored high-quality GaN epiwafers to the world’s leading foundries and manufacturers serving diverse sectors including satellite communications, telecommunications, defense sensing, and high-voltage power switches. For more information, visit us as www.swegan.se and LinkedIn.
RFHIC Corporation
Grace Cho
Manager, Global Sales & Marketing
Email: marketing@rfhic.com
SweGaN
Leslie Johnsen
Communications Advisor
Mob: +47 41 45 80 43
Email: leslie.johnsen@swegan.se
South Korea, Gwacheon – April 5th, 2024 – RFHIC (KOSDAQ:A218410)
RFHIC is excited to announce our plan to release new GaN MMICs, Transistors and Low Noise Amplifiers for various applications, including satellite communications and wireless infrastructure.
GaN PA MMICs
Click to view full image
Covering a frequency range of C-band, X-band, Ku-band, K-band and Ka-band with an output power up to 80 W, our new GaN Power Amplifier MMICs deliver outstanding solutions for next-gen satellite communications and defense applications.They will be available in surface-mount QFN, CM1012-6L, or CM1012-6L packaging options.
Built with RFHIC’s state-of-the-art gallium nitride (GaN) technology, the GaN PA MMICs provide significant advancements compared to conventional gallium arsenide (GaAs) MMICs.
With higher power density capabilities, higher efficiencies and higher voltage breakdowns, our GaN PA MMICs deliver greater levels of RF power while maintaining efficiency and linearity.
GaN devices exhibit superior thermal properties compared to GaAs, leading to improved reliablity and longevity. The superior thermal conductivity of GaN allows for efficient dissipation of heat,
reducing the risk of overheating. This thermal robustness is particularly advantageous in harsh operating environemnts and in cases of extended usage.
Additionally, our GaN PA MMICs offer far broader bandwidth capabilities, enabling solutions over a wider frequency range compared to GaAs MMICs.
Our GaN PA MMICs represent a significant leap forward in RF technology, offering an array of advantages over their GaAs counterparts. With higher power density capabilities, superior thermal properties and broader bandwidths, GaN MMICs stand as the preferred solution for high-performance RF applications, delivering excellent efficiency, reliability, and versatility.
Scheduled for launch in the second quarter of 2024.
GaN-on-SiC Transistors
Click to view full image
RFHIC’s new internally-matched GaN Transistors are designed for S, C and X-band operation, delivering an output power of up to 350 W. They will be available in air-cavity or hermetically-sealed packages and are suitable for wireless infrastructure applications in 4G LTE and 5G macro base stations. Scheduled for launch in the second quarter of 2024.
Low Noise Amplifier MMICs
Click to view full image
RFHIC’s upcoming GaN low-noise amplifiers (LNAs) are designed for operation from L to Ka-band with noise figures in the range of 1 to 2.4 dB. They will be available in module (hermetic), QFN, or ceramic QFN packaging options. These LNAs are designed for wireless communications and defense applications including WiMax, repeaters, base stations, radar, jammers, EW, and RF Subsystems. Customized solutions are available upon customer request. Scheduled for launch in the second quarter of 2024.
To learn more about our new products, click here to contact us!
About RFHIC:
RFHIC (KOSDAQ: A218410) is a global leader in designing and manufacturing GaN RF & Microwave components and systems for applications in wireless communications, defense and aerospace, and RF Energy (Industrial, Scientific, and Medical) segments. We provide industry-leading solutions for gallium-nitride (GaN) transistors, high-power solid-state power amplifiers, and high-power microwave generator systems, all within our in-house production facility. We enlighten industries with RF and Microwave advancements. To expedite a future enhanced by technological innovation – to create a better connected, safer, and stronger world for generations. Learn more at www.rfhic.com.
RFHIC® is a registered trademark
Media Contact:
- Grace Cho
- RFHIC Corporation
- Manager, Global Sales & Marketing
- marketing@rfhic.com