Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
The D080CCNH is an integrated GaN power amplifier designed for applications in X-Band military and commercial radar systems covering 9800~10300 MHz. The D080CCNH uses GaN HEMT technology, which provides high breakdown voltage, wide bandwidth, and high efficiency.
View Product Specification| Min Freq.(MHz) | 9800MHz |
|---|---|
| Max Freq.(MHz) | 10300MHz |
| Output Power(W) | 50W |
| Power Gain(dB) | 7.2dB |
| Drain Efficiency(%) | 37% |
| VDC(V) | 40 |
| Package Type | Flange |