Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s D046A1C is an 180W, S-band, GaN SiC transistor designed for weather, marine, and military radar applications. The D046A1C is designed with RFHIC’s state of the art gallium-nitride (GaN) on SiC HEMT, providing excellent thermal stability and high breakdown voltage.
View Product Specification| Min Freq.(MHz) | 2900MHz |
|---|---|
| Max Freq.(MHz) | 3300MHz |
| Output Power(W) | 180W |
| Power Gain(dB) | 13.7dB |
| Drain Efficiency(%) | 62% |
| VDC(V) | 50 |
| Package Type | MP24001 |