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IG63070P

Transistors - RF Energy
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Description

RFHIC’s IG63070P is a 70W, C-band, GaN SiC transistor designed for semiconductor equipment, microwave heating and drying, and plasma systems. The IG63070P is designed with RFHIC’s state of the art gallium-nitride (GaN) on SiC HEMT, providing excellent thermal stability and high breakdown voltage.

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Datasheet
Semiconductor equipment
Microwave Heating and Drying
Linear Accelerators
Advanced materials processing
Plasma systems

Specification

Min Freq.(MHz) 5850MHz
Max Freq.(MHz) 6650MHz
Output Power(W) 70W
Power Gain(dB) 8.8dB
Drain Efficiency(%) 40%
VDC(V) 40
Package Type Flange