Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
The D001CCNH is a integrated GaN power amplifier designed for applications in X-Band military and commercial Radar Systems covered 9200~10000 MHz. The D001CCNH uses GaN HEMT technology which provides high breakdown voltage, wide bandwidth, and high efficiency.
View Product Specification| Min Freq.(MHz) | 9200MHz |
|---|---|
| Max Freq.(MHz) | 10000MHz |
| Output Power(W) | 70W |
| Power Gain(dB) | 7.8dB |
| Drain Efficiency(%) | 40% |
| VDC(V) | 40 |
| Package Type | Flange |