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D025C8C

Transistors - RF Energy
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Description

RFHIC’s D025C8C is a 90W, 5700-5900 MHz (C-band), GaN SiC transistor designed for semiconductor equipment, microwave heating and drying, plasma systems, and industrial RF power systems. The D025C8C is designed with RFHIC’s state of the art gallium-nitride (GaN) on SiC HEMT, providing excellent thermal stability and high breakdown voltage.

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Datasheet
Semiconductor equipment
Microwave heating and drying
Linear accelerators
Advanced materials processing
Plasma systems

Specification

Min Freq.(MHz) 5700MHz
Max Freq.(MHz) 5900MHz
Output Power(W) 90W
Power Gain(dB) 12.5dB
Drain Efficiency(%) 51%
VDC(V) 43
Package Type Flange