Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RRP54591K3-43
Description
The RRP54591K3-43 is a 1.3 kW C-band GaN solid-state power amplifier (SSPA) covering the 5.4 to 5.9 GHz frequency range. Engineered for pulsed radar applications, this GaN HEMT power amplifier delivers high breakdown voltage, wide bandwidth, and high efficiency in a compact, rugged form factor. Leveraging GaN-on-SiC HEMT technology, the module provides 1300 W typical output pulse power, 43 dB power gain, and up to 30% efficiency across the C-band. Its 50 Ohm input/output impedance and pallet design make this solid-state power amplifier well suited for C-band radar, defense, and aerospace microwave systems that demand reliable high-power RF amplification.
View Product Specification
Weather Radar
Air Traffic Control Radar
Surveillance Ground Radar
Meteorological Radar
Early Detection Radar
C-Band Radar
Defense
Aerospace
Microwave Systems
Specification
| Band | C-band |
|---|---|
| Min Freq.(MHz) | 5400MHz |
| Max Freq.(MHz) | 5900MHz |
| Type | Module |
| Typ Output Power(W) | 1300W |
| Power Gain(dB) | 43dB |
| PAE(%) | 35% |
| Efficiency | 30% |
| VDC(V) | 50 |
| Dimension(mm) | 190 x 99 x 23 |
| Weight | 0.8kg |
| VSWR | 1.5:1 |
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