Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s RRM1213-22R1A-15P is an LNA fabricated on RFHIC’s GaAs p-high-electron-mobility (HEMT) process. Covering 1200 to 1300 MHz, the RRM1213-22R1A-15P provides 21dB of gain and P1dB of 15dBm, while supporting a noise figure of 0.8dB. Operating voltages from 14.5V to 15.5V.
The RRM1213-22R1A-15P’s high performance and handling ease make it ideal for L-band radars and communication systems.
Min Freq. | 1200MHz |
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Max Freq. | 1300MHz |
Typ Output P1dB | 15dBm |
Noise Figure | 0.8dB |
Power Gain | 21dB |
VDC | 15.5 |