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Transistors - RF Energy

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for RF Energy applications – operable in 915MHz, 2.45GHz, 5.8GHz with power levels capable up to 1kw. 

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Part Number Datasheet Min Freq.(MHz)Max Freq.(MHz)Output Power(W)Power Gain(dB)Drain Efficiency(%)VDC(V)Package Type
ET43055P -60005513.472.650Flange
IE101K0D -704101414.3---