Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
| Part Number | Datasheet | Min Freq.(MHz) | Max Freq.(MHz) | Typ Output Power(W) | Saturation Power(W) | Power Gain(dB) | Efficiency | VDC(V) | Package | Package Type |
| ETQ2014P | - | 6000 | 3.2 | 15 | 19 | 34 | 48 | DFN66726L-Q2 | Surface Mount | |
| AB02AAGAB | - | - | 47.8 | 60 | 11.8 | 72 | 28 | NS-BS01 | Flange | |
| RSSEC30N10BN | - | 6000 | 3 | 15 | 14 | 32 | 28 | NS-CS01E | Flange |