Home Products RF Transistors

RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

Displaying 70 of 81 products

Scroll right for more attributes

Part Number	Datasheet	Min Freq.(MHz)	Max Freq.(MHz)	Typ Output Power(W)	Power Gain(dB)	VDC(V)	Package	Package Type	Saturation Power(W)	Efficiency	Drain Efficiency(%)	Min Output Power		Output Power(W)
H009C11A		1805	1880	63	15.1	48	RF24010DKR3	Flange	385	55	-	-	-	-	-	-
H006C11D		1805	1880	45	15.8	48	RF12001DHKR3	Flange	220	54	-	-	-	-	-	-
IE18085P		1805	1880	19	19	48	RF12002KR3	Flange	90	37	-	-	40.5	-	85	19.4
IE18330PG		1805	1880	74	16	48	NS-AS01	Flange	330	40	-	-	41.5	-	330	15.4
IE18220PG		1805	1880	50	18.1	48	NS-AS01	Flange	220	41	-	-	42.7	-	220	18.3
H017		1800	2700	2	17.9	48	DFN66726L-Q2	Surface Mount	28.2	30	-	-	-	-	-	-
H014C11A		1800	2700	71	13	48	RF24010DKR3	Flange	398	49	-	-	-	-	-	-
H009C12A		1800	2200	79	14.7	48	RF24010DKR3	Flange	398	52	-	-	-	-	-	-
ID18411D		1800	1880	56.2	18	48	RF24008DKR3	Flange	410	54	-	-	53.5	-	410	17.6
IE13550D		1295	1305	550	14.9	50	-	Flange	-	-	79.2	-	79.5	550	-	-
IE09150PC		900	930	150	17.6	50	-	Flange	-	-	83.1	-	83.11	150	-	-
IE09300PC		900	930	300	18	50	-	Flange	-	-	80.2	-	80.21	300	-	-
IE08165P		770	900	37	51	48	NS-AS01	Flange	165	40	-	-	40.6	-	165	18.1
H027C11A		758	960	107	17	48	RF24010DKR3	Flange	630	57	-	-	-	-	-	-

Wireless Infrastructure

RF Energy

Defense & Aerospace

Company

RF Transistors