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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq.(MHz)	Max Freq.(MHz)	Power Gain(dB)	Drain Efficiency(%)	VDC(V)	Package Type	Output Power(W)	Typ Output Power(W)	Package	Saturation Power(W)	Efficiency		VSWR	Min Output Power
H020C13D		2110	2170	14.7	-	48	Flange	-	79	RF24010DKR3	468	54	-	-	-	-	-
ID22411D		2110	2200	17.5	51	48	Flange	-	54	RF24008DKR3	410	-	51.8	-	-	410	17.5
IE21330P		2110	2170	16	-	48	Flange	-	79	NS-AS01	330	40	40.3	-	-	330	15.9
IE21220P		2110	2170	18	-	48	Flange	-	50	NS-AS01	220	40	40.0	-	-	220	17.4
IE21385D		2110	2170	15	-	48	Flange	-	63	RF24001DKR3	385	56	55.7	-	-	385	14.6
H007C11B		2000	2500	15.0	-	48	Flange	-	-	RF12001DHKR3	220	55	-	-	-	-	-
ID19411D		1995	2020	16.7	49	48	Flange	-	55	RF24008DKR3	410	-	49.6	-	-	410	17.7
ID19701D		1930	1995	16.4	-	48	Flange	-	81.3	RF26009DKR3	692	49	-	-	-	-	-
ID19801D		1930	1995	15.5	53	48	Flange	-	107.2	RF26009DKR3	800	-	-	-	-	-	-
H020C12D		1930	2000	14.4	-	48	Flange	-	79	RF24010DKR3	398	47	-	-	-	-	-
ID19601D		1930	1995	16.2	-	48	Flange	-	81.3	RF24009DKR3	600	48.2	48.2	-	-	600	16.2
ID20411D		1930	2200	16	-	48	Flange	-	56.2	RF24008DKR3	410	48.1	48.1	-	-	410	15.5
H005C11D		1880	2025	17	-	48	Flange	-	30	RF12001DHKR3-PK2	170	48	-	-	-	-	-
H001C11A		1880	2025	16.9	-	48	Flange	-	32	RF12001DKR3-PK2	195	48	-	-	-	-	-

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RF Transistors