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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq.(MHz)	Max Freq.(MHz)	Typ Output Power(W)	Power Gain(dB)	VDC(V)	Package	Package Type	Saturation Power(W)	Efficiency	Drain Efficiency(%)	Min Output Power		Output Power(W)
ID19411D		1995	2020	55	16.7	48	RF24008DKR3	Flange	410	-	49	-	49.6	-	410	17.7
ID19701D		1930	1995	81.3	16.4	48	RF26009DKR3	Flange	692	49	-	-	-	-	-	-
ID19801D		1930	1995	107.2	15.5	48	RF26009DKR3	Flange	800	-	53	-	-	-	-	-
H020C12D		1930	2000	79	14.4	48	RF24010DKR3	Flange	398	47	-	-	-	-	-	-
ID19601D		1930	1995	81.3	16.2	48	RF24009DKR3	Flange	600	48.2	-	-	48.2	-	600	16.2
ID20411D		1930	2200	56.2	16	48	RF24008DKR3	Flange	410	48.1	-	-	48.1	-	410	15.5
H005C11D		1880	2025	30	17	48	RF12001DHKR3-PK2	Flange	170	48	-	-	-	-	-	-
H001C11A		1880	2025	32	16.9	48	RF12001DKR3-PK2	Flange	195	48	-	-	-	-	-	-
ID18801D		1805	1880	107.2	16.4	48	RF26009DKKR3	Flange	800	54.8	-	-	-	-	-	-
ID18701D		1805	1880	81.3	17.3	48	RF24008DKR3	Flange	700	54	-	-	-	-	-	-
ID18461D		1805	1880	56.2	17.4	48	RF24008DKR3	Flange	437	58	-	-	-	-	-	-
H020C11D		1805	1880	79	14.6	48	RF24010DKR3	Flange	468	54	-	-	-	-	-	-
H016C12A		1805	1880	50	13.9	48	RF18010DKR3	Flange	320	56	-	-	-	-	-	-
H016C11A		1805	2200	44	15.4	48	RF18010DKR3	Flange	316	50	-	-	-	-	-	-

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RF Transistors