Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
RFHIC’s broad range of GaN solid-state power amplifiers for high-power defense and rf energy applications. Each amplifier is designed using our advanced GaN HEMT technology, allowing them to achieve immense high powers with excellent thermal stability.
| Part Number | Datasheet | Min Freq.(MHz) | Max Freq.(MHz) | Band | Typ Output Power(W) | Power Gain(dB) | VDC(V) | Typ Output P1dB(dB) | Dimension(mm) | PAE(%) | Efficiency | Type | Cooling | VSWR | Weight | Output Power(W) | VAC(V) | Waveguide Output | Interface | Line Connection | Current Consumption | Package Type | RF Input Connector | Operating Mode | RF Output Connector | DC RF Efficiency(%) | Min Output Power | Saturation Power(W) | Min TX Output Power(W) | RX Gain(dB) | TX Gain | RX Noise Figure(dB) | |||||||||
| RFW2500H10-28 | 20 | 2500 | - | 4 | 17 | - | 28 | 36 | - | - | - | Pallet | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 17 | |
| RIM281K2-20 | - | 2856 | - | - | 60 | - | 50 | - | 254(W) x 204(D) x 28(H) | - | 45 | - | Air | 6:1 | 2 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| RIM032K0-20 | - | 325 | - | - | 72 | - | 50 | - | 360(W) ⅹ 200(D) ⅹ 66(H) | - | 70 | - | Water | 6:1 | 6 | 2000 | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |