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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq.(MHz)	Max Freq.(MHz)	Typ Output Power(W)	Power Gain(dB)	VDC(V)	Package	Package Type	Saturation Power(W)	Efficiency	Drain Efficiency(%)	Min Output Power		Output Power(W)
H008C11A		3400	3800	26	14.1	48	RF12001DHKR3	Flange	174	44	-	-	-	-	-	-
ID36461D		3400	3600	56.2	14.4	48	RF24008DKR3	Flange	460	-	47	-	46	-	460	14.4
IE36085W		3400	3600	19	17.3	48	RF12002KR3	Flange	85	35	-	-	35.0	-	85	17.3
ID26461D		2620	2690	56.2	16.1	48	RF24008DKR3	Flange	447	57	-	-	-	-	-	-
H030C11D		2620	2690	79	11.9	48	RF24010DKR3	Flange	398	47	-	-	-	-	-	-
H029C11A		2620	2690	54	14.1	48	RF18010DKR3	Flange	310	50	-	-	-	-	-	-
H028P1		2620	2690	3.2	18.6	48	DFN66726L-Q2	Surface Mount	33.1	23	-	-	-	-	-	-
H002C11A		2580	2630	32	14.4	48	RF12001DHKR3	Flange	195	53	-	-	-	-	-	-
ID26411D		2570	2620	60	15.2	48	RF24008DKR3	Flange	410	51.1	-	-	51.1	-	410	15.2
H018C11A		2520	2630	40	14.4	48	RF18010DKR3	Flange	316	50	-	-	-	-	-	-
H002C12A		2496	2690	32	14.4	48	RF12001DHKR3-PK2	Flange	195	53	-	-	-	-	-	-
IE24100P		2400	2500	100	14.8	50	-	Flange	-	-	72	-	73.3	100	-	-
IE24150P		2400	2500	150	13.3	50	-	Flange	-	-	73.3	-	73.3	150	-	-
IE24200P		2400	2500	200	13.8	50	-	Flange	-	-	74.9	-	76.6	200	-	-

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RF Transistors