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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq.(MHz)	Max Freq.(MHz)	Power Gain(dB)	Drain Efficiency(%)	VDC(V)	Package Type	Output Power(W)	Typ Output Power(W)	Package	Saturation Power(W)	Efficiency		VSWR	Min Output Power
IE24200P		2400	2500	13.8	74.9	50	Flange	200	200	-	-	-	76.6	-	-	-	-
IE24300P		2400	2500	12.3	71.2	50	Flange	300	300	-	-	-	71.2	-	-	-	-
ID23461D		2300	2400	16.2	-	48	Flange	-	56.2	RF24008DKR3	460	56	-	-	-	-	-
H029C12A		2300	2400	13.5	-	48	Flange	-	48	RF18010DKR3	302	48	-	-	-	-	-
H007C11A		2300	2400	15.3	-	48	Flange	-	40	RF12001DHKR3	240	55	-	-	-	-	-
ID24330WD		2300	2500	13.5	47.2	48	Flange	347	338	-	347	-	65.0	-	343	-	-
ID22801D		2110	2170	15.9	-	48	Flange	-	104.7	RF26009DKR3	800	53	-	-	-	-	-
ID22701D		2110	2170	15.8	-	48	Flange	-	81.3	RF26009DKR3	700	53.5	-	-	-	-	-
ID22461D		2110	2170	17	-	48	Flange	-	56.2	RF24008DKR3	460	58	-	-	-	-	-
ID22441D		2110	2170	17.4	-	48	Flange	-	53.7	RF24008DKR3	407	58	-	-	-	-	-
H020C13D		2110	2170	14.7	-	48	Flange	-	79	RF24010DKR3	468	54	-	-	-	-	-
ID22411D		2110	2200	17.5	51	48	Flange	-	54	RF24008DKR3	410	-	51.8	-	-	410	17.5
IE21330P		2110	2170	16	-	48	Flange	-	79	NS-AS01	330	40	40.3	-	-	330	15.9
IE21220P		2110	2170	18	-	48	Flange	-	50	NS-AS01	220	40	40.0	-	-	220	17.4

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RF Transistors