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RF Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. Offering both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

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Part Number	Datasheet	Min Freq.(MHz)	Max Freq.(MHz)	Typ Output Power(W)	Power Gain(dB)	VDC(V)	Package	Package Type	Saturation Power(W)	Efficiency	Drain Efficiency(%)	Min Output Power		Output Power(W)
IE24300P		2400	2500	300	12.3	50	-	Flange	-	-	71.2	-	71.2	300	-	-
ID23461D		2300	2400	56.2	16.2	48	RF24008DKR3	Flange	460	56	-	-	-	-	-	-
H029C12A		2300	2400	48	13.5	48	RF18010DKR3	Flange	302	48	-	-	-	-	-	-
H007C11A		2300	2400	40	15.3	48	RF12001DHKR3	Flange	240	55	-	-	-	-	-	-
ID24330WD		2300	2500	338	13.5	48	-	Flange	347	-	47.2	343	65.0	347	-	-
ID22801D		2110	2170	104.7	15.9	48	RF26009DKR3	Flange	800	53	-	-	-	-	-	-
ID22701D		2110	2170	81.3	15.8	48	RF26009DKR3	Flange	700	53.5	-	-	-	-	-	-
ID22461D		2110	2170	56.2	17	48	RF24008DKR3	Flange	460	58	-	-	-	-	-	-
ID22441D		2110	2170	53.7	17.4	48	RF24008DKR3	Flange	407	58	-	-	-	-	-	-
H020C13D		2110	2170	79	14.7	48	RF24010DKR3	Flange	468	54	-	-	-	-	-	-
ID22411D		2110	2200	54	17.5	48	RF24008DKR3	Flange	410	-	51	-	51.8	-	410	17.5
IE21330P		2110	2170	79	16	48	NS-AS01	Flange	330	40	-	-	40.3	-	330	15.9
IE21220P		2110	2170	50	18	48	NS-AS01	Flange	220	40	-	-	40.0	-	220	17.4
IE21385D		2110	2170	63	15	48	RF24001DKR3	Flange	385	56	-	-	55.7	-	385	14.6

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RF Transistors