Wireless Infrastructure
Meeting the continually evolving demands for 4G LTE & 5G wireless infrastructure applications with RFHIC's gallium nitride (GaN) on silicon carbide (SiC) technology solutions
Welcome to RFHIC’s October 2026 update. This month, we share highlights from European Microwave Week 2026 in London — where we introduced MTR, our newest lineup of GaN hybrid amplifiers — feature three GaN wideband amplifiers for defense applications, and share where you can meet our team next.
RFHIC Exhibits at European Microwave Week 2026
From October 4–9, RFHIC exhibited at European Microwave Week (EuMW) 2026 at ExCeL London, welcoming engineers, program leads, and partners to Booth #B40A.
At the booth, we presented RFHIC’s One-Stop GaN Solution — a vertically integrated value chain spanning GaN transistor assembly, packaging, module design, and system manufacturing under single-source accountability — together with our three application pillars: replacing traveling-wave tubes in defense and aerospace, efficient and linear amplification for wireless infrastructure, and replacing magnetrons in RF Energy.
The highlight of the show was MTR, our newest lineup of GaN hybrid amplifiers. Each MTR device is a fully integrated, 50 Ω-matched power amplifier — input matching, GaN power transistor, and output matching in a single package from 9.8 × 20.6 mm — giving customers a complete power stage in one compact device. The result is a more compact footprint, higher power at up to 50 V, no external matching to design, and a lower cost per watt. It is designed for radar, electronic warfare, data links, tactical radios, and airborne and space applications.
The MTR lineup currently covers S-, C-, and X-band:
RFHIC MTR — GaN Hybrid Amplifiers
| Fully integrated GaN power stage | 50 Ω input/output matched | Packages from 9.8 × 20.6 mm | ||||||||
| P/N | Band | Min Freq (MHz) | Max Freq (MHz) | Output Power (W) | Gain (dB) | VDC (V) | Efficiency (%) | Datasheet |
|---|---|---|---|---|---|---|---|---|
| D046A1C | S-band | 2900 | 3300 | 180 | 13.7 | 50 | 62 | Datasheet |
| D025C8C | C-band | 5700 | 5900 | 90 | 12.5 | 43 | 51 | Datasheet |
| IG63070P | C-band | 5850 | 6650 | 70 | 8.8 | 40 | 40 | Datasheet |
| D001CCNH | X-band | 9200 | 10000 | 70 | 7.8 | 50 | 40 | Datasheet |
| D080CCNH | X-band | 9800 | 10300 | 50 | 7.2 | 40 | 37 | Datasheet |
As RF systems continue to evolve, our focus is on high-performance GaN solutions that simplify integration, improve efficiency, and accelerate development for next-generation applications — the themes that came up again and again in conversations at the booth.
For those who couldn’t join us in London, Microwave Journal filmed a walkthrough of what we showcased:
🎥RFHIC Introduces New GaN Hybrid Amplifiers at EuMW 2026 (Microwave Journal)
GaN Wideband Amplifiers for Defense
This month, we’re highlighting three GaN wideband amplifiers for defense systems — from broadband electronic warfare and jamming to L-band radar and C-band applications.
RWP0427100-53
GaN Wideband Amplifier · 80 W · 400–2,700 MHz · 49 dB gain · 30% efficiency · 32 V
Covers 400–2,700 MHz in a single GaN-on-SiC amplifier with full input/output matching and RFHIC’s patented thermal handling — suited to electronic warfare, jamming, radar, SATCOM, and EMI/RFI applications.
RWP1516100-57
GaN Wideband Power Amplifier · 100 W CW · 1,550–1,610 MHz (L-band) · 62 dB gain · 50% efficiency · 48 V
A high-gain L-band amplifier with 50 Ω-matched input and output, built for radar, jamming, drone/UAV, and satellite communication systems.
RWP5872050-10
GaN Wideband Amplifier · 50 W · 5.8–7.2 GHz (C-band) · 35 dB gain · 44.8% efficiency · 32 V
A flanged GaN pallet with all matching included, covering 5.8–7.2 GHz for radar, jamming, drone/UAV, and satellite communication systems.
Interested in datasheets or a custom requirement? Contact our team — we’re happy to help.
Upcoming Event — Euronaval 2026, We’re Attending
Our team will be visiting Euronaval 2026, the leading international naval defence and maritime security exhibition, held at Paris Nord Villepinte from November 3–6, 2026. It’s a valuable opportunity to meet partners across the naval and maritime defence ecosystem and to discuss GaN solutions for radar, electronic warfare, and secure communications.
If you’ll be attending and would like to connect with RFHIC on-site, we’d be glad to arrange a meeting. To book a meeting in advance, please apply through the form below:
🔔 Book a Meeting with RFHIC: https://form.jotform.com/261481805574462
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About RFHIC
RFHIC (KOSDAQ: A218410) is a global leader in GaN RF and microwave solutions, specializing in wireless communications, defense, aerospace, and industrial RF energy applications. The company develops and manufactures high-power GaN transistors, MMICs, solid-state power amplifiers, and microwave generator systems, all produced in-house for superior quality and performance. RFHIC is committed to advancing next-generation power semiconductor technologies to create a more connected, energy-efficient, and innovative future. Learn more at www.rfhic.com.
RFHIC® is a registered trademark.
Media Contact
Grace Cho
RFHIC Corporation
Head of Global Sales & Marketing
